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Quantitative Investigation of As Segregation at the SiO2/Si Interface by SIMS and RBS

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Secondary Ion Mass Spectrometry SIMS IV

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 36))

Abstract

Dynamic segregation of dopants at the SiO2/Si-interface during thermal oxidation is of major interest for process development and modelling in silicon integration circuit technology. The dopant concentrations of interest extend over a wide concentration range, hardly accessible with methods other than SIMS.

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References

  1. W. Reuter and K. Wittmaack: Appl. Surf. Sci. 5, 221 (1980)

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  4. K. Wittmaack: Appl. Phys. Lett. 29, 552 (1970)

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© 1984 Springer-Verlag Berlin Heidelberg

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Frenzel, H., Maul, J.L., Eichinger, P., Frenzel, E., Haberger, K., Ryssel, H. (1984). Quantitative Investigation of As Segregation at the SiO2/Si Interface by SIMS and RBS. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_65

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  • DOI: https://doi.org/10.1007/978-3-642-82256-8_65

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82258-2

  • Online ISBN: 978-3-642-82256-8

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