Abstract
Dynamic segregation of dopants at the SiO2/Si-interface during thermal oxidation is of major interest for process development and modelling in silicon integration circuit technology. The dopant concentrations of interest extend over a wide concentration range, hardly accessible with methods other than SIMS.
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References
W. Reuter and K. Wittmaack: Appl. Surf. Sci. 5, 221 (1980)
J. Maul, H. Frenzel: Proceedings, Springer Series in Electrophysics 10, 361 (1982)
H. Frenzel: Ph. D. Thesis, Technical University Aachen, FRG (1980)
K. Wittmaack: Appl. Phys. Lett. 29, 552 (1970)
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© 1984 Springer-Verlag Berlin Heidelberg
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Frenzel, H., Maul, J.L., Eichinger, P., Frenzel, E., Haberger, K., Ryssel, H. (1984). Quantitative Investigation of As Segregation at the SiO2/Si Interface by SIMS and RBS. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_65
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DOI: https://doi.org/10.1007/978-3-642-82256-8_65
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