Abstract
As SIMS has a very high sensitivity, it is useful for analyzing low concentrations of impurities in GaAs [1]. Usually, ion-implanted samples are used as standards for SIMS quantitative analysis. However, secondary ion yields of various impurities in GaAs have not been investigated, because for GaAs, there are no standard samples having certified values such as with NBS standard samples.
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References
R. D. Fairman et al.,IEEE, ED 28, 135 (1981)
V. R. Deline, Proceedings of SIMS II, p48 (1979)
A. E. Morgan and H. W. Werner, Anal. Chem., 48, 699 (1976)
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© 1984 Springer-Verlag Berlin Heidelberg
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Kurosawa, S., Homma, Y., Tanaka, T., Yamawaki, M. (1984). SIMS Quantitative Analysis of Impurities in GaAs Using Multi-Element-Doped GaAs. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_31
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DOI: https://doi.org/10.1007/978-3-642-82256-8_31
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