Abstract
If the process of secondary ion formation is viewed as one in which the secondary ion is formed amongst the sputtered flux from the surface and then survives the outgoing trajectory to be analysed, we can write the yield in the energy range E to E + dE, and angle range θ to θ + dθ as
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where ⇅(E,θ) is the sputtered atom flux
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R+(E,θ) is the probability of ionisation in the ejection process
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P(E,θ) is the probability of surviving the outgoing trajectory in an ionised state.
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References
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© 1984 Springer-Verlag Berlin Heidelberg
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Garrett, R.F., MacDonald, R.J., O’Connor, D.J. (1984). The Energy Dependence of the Ionisation Coefficient in SIMS. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_19
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DOI: https://doi.org/10.1007/978-3-642-82256-8_19
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