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Intrinsic and Extrinsic Surface Electronic States of Semiconductors

  • J. D. Dow
  • R. E. Allen
  • O. F. Sankey
Chapter
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 35)

Abstract

In the bulk of a tetrahedral semiconductor, a single substitutional s-p bonded impurity or vacancy will ordinarily produce four “deep” levels with energies near the fundamental band gap: one s-like (A1) and three p-like (T2) [20.1]. These deep levels may lie within the fundamental band gap, in which case they are conventional deep levels, or they may lie within either the conduction or the valence band as “deep resonances.” A sheet of N vacancies produces 4N such deep levels—namely, the intrinsic surface-state energy bands, which may or may not overlap the fundamental gap (to a first approximation, insertion of a sheet of vacancies is equivalent to creating a surface).

Keywords

Dispersion Curve Schottky Barrier Schottky Barrier Height Antisite Defect Deep Impurity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • J. D. Dow
  • R. E. Allen
  • O. F. Sankey

There are no affiliations available

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