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Phonon Scattering at Electronically Degenerative Systems: An Application to the Defect Systems Si(In), Si(B), and GaAs(Mn)

  • J. Maier
  • E. Sigmund
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 51)

Abstract

Phonon scattering experiments at the Г8 ground state of acceptors in cubic semiconductors as Si(In), Si(B), and GaAs(Mn) show a specific resonance structure in the meV range [1], [2], which can be explained by a dynamical Jahn-Teller effect [3].However, due to the large extension of the defect wave function (5–15 Å) the influence of random internal fields is reinforced, which causes a static splitting of the Г8 state. We present a first step to a unified description of the phonon scattering processes including the influences of static fields together with the dynamical electron-phononinteraction.

Keywords

Relaxation Rate Phonon Scattering Elastic Field Static Splitting Experimental Thermal Conductivity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • J. Maier
    • 1
  • E. Sigmund
    • 1
  1. 1.Institut für Theoretische PhysikUniversität StuttgartStuttgart 80Fed. Rep. of Germany

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