Phonon Scattering at Electronically Degenerative Systems: An Application to the Defect Systems Si(In), Si(B), and GaAs(Mn)
Phonon scattering experiments at the Г8 ground state of acceptors in cubic semiconductors as Si(In), Si(B), and GaAs(Mn) show a specific resonance structure in the meV range , , which can be explained by a dynamical Jahn-Teller effect .However, due to the large extension of the defect wave function (5–15 Å) the influence of random internal fields is reinforced, which causes a static splitting of the Г8 state. We present a first step to a unified description of the phonon scattering processes including the influences of static fields together with the dynamical electron-phononinteraction.
KeywordsRelaxation Rate Phonon Scattering Elastic Field Static Splitting Experimental Thermal Conductivity
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