Laser Doping of Silicon by the Dissociation of Metal Alkyls

  • K. Ibbs
  • M. L. Lloyd
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 33)


Pulsed UV laser doping of silicon has been shown to yield high levels of activated dopant for a variety of implant depths and dopant concentrations. The technique combines the rapid thermal cycling times found in pulsed laser annealing, with the localised in situ generation of dopant species by pyrolysis and photolysis of precursors to allow one-step fabrication of p-n devices [1,2]. We have now demonstrated single-step doping of silicon with boron and phosphorus to form p- and n-type material; and performed initial experiments on overdoping to produce npn or pnp trilayer structures.


Dopant Concentration Laser Annealing Dopant Species Excimer Laser Annealing Dopant Precursor 
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    K.G.Ibbs and M.L.Lloyd UV laser doping of silicon Optics and Laser Technology, 15, p.35, (1983)CrossRefGoogle Scholar
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    D.J.Godfrey, A.C.Hill and C.Hill J. Electrochem. Soc., 128 (8), p. 1798, (1981)CrossRefGoogle Scholar
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    K.G.Ibbs and M.L.Lloyd Characteristics of laser implantation/doping Materials Res. Soc., November 1982 Proc.of “Laser diagnostics and photochemical processing for semiconductor devices”,To be published by Elservier 1983Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1983

Authors and Affiliations

  • K. Ibbs
    • 1
  • M. L. Lloyd
    • 1
  1. 1.GEC Research LaboratoriesHirst Research CentreWembleyUK

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