Abstract
Electric-field-induced Raman scattering as a surface sensitive technique for studying Schottky barrier formation in polar semiconductors is reviewed. The advantages of this method are discussed — with GaAs(110) as an example — and compared to other, widely used techniques.
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References
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© 1983 Springer-Verlag Berlin Heidelberg
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Schäffler, F., Abstreiter, G. (1983). Fermi Level Pinning on Clean and Covered GaAs (110) Surfaces Studied by Electric-Field Induced Raman Scattering. In: Aussenegg, F.R., Leitner, A., Lippitsch, M.E. (eds) Surface Studies with Lasers. Springer Series in Chemical Physics, vol 33. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82085-4_23
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DOI: https://doi.org/10.1007/978-3-642-82085-4_23
Publisher Name: Springer, Berlin, Heidelberg
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