Growth from the Vapor Phase

  • Alexander A. Chernov
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 36)


The statistics in publications on crystal growth show that a large portion (~25% – 30%) of the papers in this field are devoted to the growth of crystals and films from the vapor phase. Together with crystallization from melts or solutions, crystallization from the vapor phase can be considered one of the most commonly used methods of crystal growth, particularly in semiconductor electronics. This chapter gives a systematic account of the foundations of the methods generally used to grow crystals from the vapor: physical vapor deposition (molecular-beam method, cathode sputtering, vapor phase crystallization in a closed system, gas flow crystallization); chemical vapor deposition (chemical transport, vapor decomposition, vapor synthesis); and crystallization from the vapor via a liquid zone. Growth mechanisms and the typical parameters of growth processes and of the grown crystals are also discussed for each technique.


Vapor Phase Physical Vapor Deposition Source Zone Epitaxial Film Silicon Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • Alexander A. Chernov
    • 1
  1. 1.Institute of CrystallographyAcademy of Sciences of the USSRMoscowUSSR

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