Abstract
A defect whose associated energy level lies in the forbidden gap exchanges carriers with the conduction and valence bands through the emission and recombination of electrons and holes. As we discussed in [Ref.1.1, Sect. 7.3.2], the electronic transitions between level ET and the bands allow the determination of the average time a defect is occupied by a carrier, i.e., the occupancy of the level. In this chapter we consider the rates of emission of electrons or holes from the defect level to the bands and the rates of recombination. Because these rates depend on the free energy of ionization and on the cross sections for electrons and holes trapping on the defect, their study provides information from which practically all the electrical characteristics of the defect (enthalpy and entropy of ionization, trapping cross section etc.) can be deduced. Moreover, variation of the cross section versus temperature appears to be a powerful tool to get an insight into the defect-phonon interaction and consequently the correlated lattice distortion around the defect.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
C.T. Sah: Proc. IEEE 55, 654 (1967)
E.H. Rhoderick: Metal—Semiconductor Contacts ( Clarendon Press, Oxford 1978 )
R.A. Smith: Semiconductors ( University Press, Cambridge 1968 )
D. Pons: Thesis 3rd Cycle, Paris VI University (1979), unpublished 6.5 D. Pons: To be published
D. Pons: Appl. Phys. Lett. 37, 413 (1980)
D. Stievenard: Thesis 3rd Cycle, Lille (1982)
C.T. Sah, L. Forbes, L.L. Rosier, A.F. Tasch, A.B. Tole: Appl. Phys. Lett. 15, 145 (1969)
D.V. Lang: J. Appl. Phys. 7, 3023 (1974)
D.V. Lang: In Thermally Stimulated Relaxation in Solids, ed. By P. Bräunlich, Topics Appl. Phys., Vol.37 (Springer, Berlin, Heidelberg, New York 1979 )
A. Broniatowski, A. Blosse, B.C. Srivastava, J.C. Bourgoin: J. Appl. Phys. (to be published)
For more details see, for instance, W.G. Oldham, S.S. Naik: Solid State Electronics 15, 1085 (1972)
N.F. Mott, H.S. Massey: Theory of Atomic Collisions ( Clarendon Press, Oxford 1949 )
N. Solar, E. Burstein: Phys. Rev. 98, 1757 (1955)
M. Born: Z. Physik 38, 803 (1926)
M. Lax: Phys. Rev. 119, 1502 (1960)
D.R. Hamann, A.L. McWorther: Phys. Rev. A134, 250 (1964)
G. Ascarelli, S. Rodriguez: J. Phys. Chem. Solids 22, 57 (1961)
G. Ascarelli, S. Rodriguez: Phys. Rev. 124, 1321 (1961)
G. Ascarelli, S. Rodriguez: Phys. Rev. 127, 167 (1962)
K. Huang: Scientia Sinica 24, 27 (1981)
B.K. Ridley: J. Phys. C: Sol. State Phys. 11, 2323 (1978)
J.J. Markham: Rev. Mod. Phys. 31, 956 (1959)
K. Huang, A. Rhys: Proc. Roy. Soc. (London) 204A, 406 (1950)
V.A. Kovarskii: Sov. Phys. Sol. State 4, 1200 (1962)
We are indebted to Dr. Burt for enlightening discussions about the comparison of the different works from [6.18 to 6.22]
D.V. Lang, C.H. Henry: Phys. Rev. Lett. 35, 1525 (1975)
C.H. Henry, D.V. Lang: Phys. Rev. 15, 989 (1977)
G.D. Watkins, J.R. Troxell: Phys. Rev. Lett. 44, 593 (1980)
G.A. Baraff, E.O. Kane, M. Schlüter: Phys. Rev. 21, 3563 (1980)
J. Frenkel: Phys. Rev. 54, 647 (1938)
L.C. Kimerling, J.L. Benton: Appl. Phys. Lett. 39, 410 (1981)
A.K. Jonsher: Thin Solid Films 1, 213 (1967)
J.L. Hartke: J. Appl. Phys. 39, 4871 (1968)
A. Chantre, G. Vincent, D. Bois: Phys. Rev. 15, 23, 5335 (1981)
L.D. Landau, E.M. Lifshitz: Quantum Mechanics (Pergamon, London, Paris 1958 )
J.R. Oppenheimer: Phys. Rev. 31, 66 (1928)
S. Makram-Ebeid, M. Lannoo: Phys. Rev. Lett. 48, 1281 (1982)
S. Makram-Ebeid, M. Lannoo: Phys. Rev. 25, 6406 (1982)
D. Pons, S. Makram-Ebeid: J. Physique Appl. 40, 1161 (1979)
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1983 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Bourgoin, J., Lannoo, M. (1983). Carrier Emission and Recombination. In: Point Defects in Semiconductors II. Springer Series in Solid-State Sciences, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81832-5_6
Download citation
DOI: https://doi.org/10.1007/978-3-642-81832-5_6
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-81834-9
Online ISBN: 978-3-642-81832-5
eBook Packages: Springer Book Archive