Electrical Properties

  • Jacques Bourgoin
  • Michel Lannoo
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 35)

Abstract

In this and the following chapter, we consider all aspects of the interaction between charged carriers (electrons and holes) which are in the conduction and valence bands and those localized on defect levels when only phonons are involved. Interaction with photons is treated in Chap.4. As in the other chapters, this interaction is studied in order to investigate information on defects obtained from the behavior of the free carriers.

Keywords

Entropy Cadmium Boron Sine Gallium 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1983

Authors and Affiliations

  • Jacques Bourgoin
    • 1
  • Michel Lannoo
    • 2
  1. 1.Groupe de Physique des Solides de l’Ecole Normale SupérieureUniversité de Paris VIIParis CedexFrance
  2. 2.Laboratoire d’Etude des Surfaces et Interfaces, Physique des SolidesInstitut Superieur d’Electronique du NordLille CédexFrance

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