Electrical Properties

  • Jacques Bourgoin
  • Michel Lannoo
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 35)


In this and the following chapter, we consider all aspects of the interaction between charged carriers (electrons and holes) which are in the conduction and valence bands and those localized on defect levels when only phonons are involved. Interaction with photons is treated in Chap.4. As in the other chapters, this interaction is studied in order to investigate information on defects obtained from the behavior of the free carriers.


Valence Band Free Carrier Defect Level Impurity Band Donor Impurity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 5.1
    For a detailed treatment of semiconductor statistics, see J.S. Blake-more: Semiconductor Statistics ( Pergamon, London 1962 )Google Scholar
  2. 5.2
    E.A. Guggenheim: Proc. Phys. Soc. (London) A66, 121 (1953)CrossRefADSGoogle Scholar
  3. P.T. Landsberg: Proc. Phys. Soc. (London) A66, 662 (1953)CrossRefADSGoogle Scholar
  4. 5.3
    F.J. Morin, J.P. Maita: Phys. Rev. 98, 28 (1954)CrossRefADSGoogle Scholar
  5. 5.4
    P.P. Debye, E.M. Conwell: Phys. Rev. 93, 693 (1954)CrossRefADSGoogle Scholar
  6. 5.5
    R.A. Smith: Semiconductors ( University Press, Cambridge 1968 )Google Scholar
  7. 5.6
    R. Coates, E.W.J. Mitchell: Adv. Phys. 24, 593 (1975)CrossRefADSGoogle Scholar
  8. 5.7
    N.F. Mott: In Electronic and Structural Properties of Amorphous Semi- conductors, ed. by P.G. Le Comber, J. Mort ( Academic, London 1973 )Google Scholar
  9. 5.
    See, for instance, J.M. Ziman: Models of Disorder (Cambridge Univ.Press, Cambridge 1972) Chap.9Google Scholar
  10. 5.9
    A. Miller, E. Abrahams: Phys. Rev. 120, 745 (1960)CrossRefMATHADSGoogle Scholar
  11. 5.10
    B.I. Shklovskii, A.L. Efros, I.Y. Yanehel: JETP Lett. 14, 233 (1971)ADSGoogle Scholar
  12. 5.11
    J.A. Johnson, K. Lark-Horovitz: Phys. Rev. 72, 531 (1974); 71, 374Google Scholar
  13. H. Fritzsche, M. Cuevas: Phys. Rev. 119, 1238 (1960)Google Scholar
  14. I. Esterman, A. Foner, J.A. Reindall: Phys. Rev. 72, 530 (1947)Google Scholar
  15. 5.12
    T.A. Longo, R.K. Ray, K. Lark-Horovitz: J. Phys. Chem. Solids 8, 259 (1959)CrossRefADSGoogle Scholar
  16. 5.13
    H. Fritzsche, M. Cuevas: Phys. Rev. 119, 1238 (1960)CrossRefADSGoogle Scholar
  17. 5.14
    B. Massarani, M. Caillot, J.C. Bourgoin: Phys. Rev. 815, 2224 (1977)Google Scholar
  18. 5.15
    J.C. Bourgoin, G. Frossati, A. Ravex, D. Thoulouze, M. Vandorpe, B. Vaksmann: Phys. Stat. Sol. (a) 92, 585 (1979)CrossRefADSGoogle Scholar
  19. 5.16
    B. Massarani, J.C. Bourgoin, R.M. Chrenko: Phys. Rev. B17, 1758 (1978)CrossRefADSGoogle Scholar
  20. 5.17
    See, for instance, P. Kireev: La Physique des Semiconducteurs (MIR,Moscow 1975 )Google Scholar
  21. 5.18
    D.L. Dexter, F. Seitz: Phys. Rev. 86, 964 (1952)CrossRefADSGoogle Scholar
  22. 5.19
    See, for instance, R.H. Bube: Electronic Properties of Crystalline Solids ( Academic, New York 1974 )Google Scholar
  23. 5.20
    E. Conwell: Phys. Rev. 77, 388 (1950)CrossRefMATHADSGoogle Scholar
  24. 5.21
    E. Conwell, V.F. Weisskopf: Phys. Rev. 77, 388 (1950)CrossRefMATHADSGoogle Scholar
  25. 5.22
    H. Brooks: Adv. in Electronics and Electron Physics, Vol.7, ed. by L. Marton (Academic, New York 1955 ) p. 85CrossRefGoogle Scholar
  26. 5.23
    A.D. Boardman: Proc. Phys. Soc. 85, 141 (1965)Google Scholar
  27. 5.24
    See, for instance, H.S.W. Massey, E.H.S. Burhop: Electronic and Ionic Impact Phenomena, Vold ( Clarendon Press, Oxford 1969 )Google Scholar
  28. 5.25
    See, for instance, L. Schiff: Quantum Mechanics, 2nd Ed. (I’1acGraw Hill, New York 1949 )Google Scholar
  29. 5.26
    C. Erginsoy: Phys. Rev. 79, 1013 (1950)CrossRefADSGoogle Scholar
  30. 5.27
    P.P. Debye, E.M. Conwell: Phys. Rev. 93, 693 (1954)CrossRefADSGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1983

Authors and Affiliations

  • Jacques Bourgoin
    • 1
  • Michel Lannoo
    • 2
  1. 1.Groupe de Physique des Solides de l’Ecole Normale SupérieureUniversité de Paris VIIParis CedexFrance
  2. 2.Laboratoire d’Etude des Surfaces et Interfaces, Physique des SolidesInstitut Superieur d’Electronique du NordLille CédexFrance

Personalised recommendations