Abstract
The first volume [1.1] contains seven chapters:
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1)
Atomic Configuration of Point Defects,
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2)
Effective Mass Theory,
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3)
Simple Theory of Deep Levels in Semiconductors,
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4)
Many-Electron Effects and Sophisticated Theories of Deep Levels,
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5)
Vibrational Properties and Entropy,
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6)
Thermodynamics of Defects,
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7)
Defect Migration and Diffusion.
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References
M. Lannoo, J.C. Bourgoin: Point Defects in Semiconductors I, Theoretical Aspects, Springer Series in Solid-State Sciences, Vol. 22 ( Springer, Berlin, Heidelberg, New York 1981 )
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© 1983 Springer-Verlag Berlin Heidelberg
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Bourgoin, J., Lannoo, M. (1983). Introduction. In: Point Defects in Semiconductors II. Springer Series in Solid-State Sciences, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81832-5_1
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DOI: https://doi.org/10.1007/978-3-642-81832-5_1
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-81834-9
Online ISBN: 978-3-642-81832-5
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