Abstract
Junction models of ion-implanted PV HgCdTe detectors are discussed. Different infrared intrinsic absorption mechanism of these devices and devices with thermally diffused junction are analysed and compared. Effects on sensitivity and spectral response of these devices due to Burstein-Moss shift and free carrier absorption are discussed.
Initial results on ion-implanted HgCdTe layers annealed by pulsed ruby laser are reported. Recovery from crystal damage and electrical properties of ion-implanted layers are compared for laser and thermal annealing.
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© 1982 Springer-Verlag Berlin, Heidelberg
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Chingtai, Z. (1982). Ion Implantation and Laser Annealing of HgCdTe. In: Waidelich, W. (eds) Optoelektronik in der Technik / Optoelectronics in Engineering. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81693-2_39
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DOI: https://doi.org/10.1007/978-3-642-81693-2_39
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-10969-3
Online ISBN: 978-3-642-81693-2
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