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Fundamental Physics of Amorphous Semiconductors pp 145–154Cite as

Some Problems of the Electron Theory of Disorderd Semiconductors

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Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 25))

Abstract

In this talk two problems of the electron theory of disordered semiconductors are considered. One of them is connected with the Anderson localization, another one—with the nature of the random field acting upon the charge carriers in disordered semiconductors of various chemical composition.

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Author information

Authors and Affiliations

  1. Faculty of Physics, Moscow University, Moscow, B-234, USSR

    V. L. Bonch-Bruevich

Authors
  1. V. L. Bonch-Bruevich
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Editor information

Editors and Affiliations

  1. Research Institute for Fundamental Physics, Yukawa Hall, Kyoto University, Kyoto 606, Japan

    Fumiko Yonezawa

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© 1981 Springer-Verlag Berlin Heidelberg

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Bonch-Bruevich, V.L. (1981). Some Problems of the Electron Theory of Disorderd Semiconductors. In: Yonezawa, F. (eds) Fundamental Physics of Amorphous Semiconductors. Springer Series in Solid-State Sciences, vol 25. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81604-8_11

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  • DOI: https://doi.org/10.1007/978-3-642-81604-8_11

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-81606-2

  • Online ISBN: 978-3-642-81604-8

  • eBook Packages: Springer Book Archive

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