Abstract
In the surface space charge layer of a MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor) a quasi-two-dimensional (2d) electron gas of variable carrier density is present. Because of its versatility this system has been studied both experimentally and theoretically in great detail during the last years. In the presence of a strong magnetic field perpendicular to the surface the system is fully quantized due to Landau and surface quantization. Oscillations of the Shubnikov-de Haas type (SdH) occur at low temperatures when either the magnetic field or the carrier density in the surface channel is varied. From the analysis of SdH oscillations, which were first observed by FOWLER et al. [1], the electronic properties of space charge layers on silicon of either p- or n-type and of different surface orientation were determined. Magnetic fields of the order 10 T, which are available in many laboratories, have proved to be yery useful and often sufficient to study transport properties in 2d systems with a high carrier mobility. Higher magnetic fields, up to about 20 T, are necessary for the investigation of energy splittings not resolved in lower fields. In a so-called tilt field experiment, which was first employed by FANG et al. [2] for the determination of the effective spin splitting, such high fields allow measurements at both high tilt angles and sufficiently strong components of the magnetic field perpendicular to the surface. This type of experiment is one of the most important techniques to determine the magnitude of energy splittings in a 2d system from magnetotransport measurements.
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Englert, T. (1981). Electron Transport in Silicon Inversion Layers at High Magnetic Fields. In: Chikazumi, S., Miura, N. (eds) Physics in High Magnetic Fields. Springer Series in Solid-State Sciences, vol 24. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81595-9_35
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DOI: https://doi.org/10.1007/978-3-642-81595-9_35
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