Investigation of Strain Effects in Epitaxial Semiconductor Films by Interband Magnetooptical Transitions: IV–VI Compounds
Since the early magnetooptical investigations of IV-VI compounds by Palik et al.  it has been known, that epitaxially grown single crystalline films on various alkali halide substrates exhibit strain effects. These are caused by the difference in the temperature dependence of the thermal expansion coefficients of semiconductor film and substrate. This mismatch leads to a tetragonal(on (100) oriented substrates: NaCl/kCl) or rhombo-hedral (on (111) oriented substrates: BaF2, CaF2) distortion . e.g. in Ref.  it was shown that the energy gap of PbTe/NaCl is different from bulk PbTe at low temperatures. Despite these shortcomings heteroepitaxial semiconductor films are of considerable interest for devices like infrared detectors.
KeywordsStrain Effect Elastic Displacement Increase Film Thickness Semiconductor Film Strain Profile
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