Abstract
The existence of the electron-hole liquid (EHL), in a number of indirect gap semiconductors (Ge, Si, GaP, SiC) has now been firmly established [1–31]. The Fermi liquid nature of the degenerate electron-hole system is very clearly demonstrated in magnetic field experiments. Quantum, de Haas-van Alphen-like oscillations are observed in a variety of EHL properties eg luminescence intensity [4], lifetime [5], ultrasonic absorption [6] and infrared absorption [ 7], [ 8], [9] whenever an electron or hole Landau level crosses its respective Fermi energy. The observation of such Landau oscillations forms part of the subject of the present paper. Hole oscillations in the EHL luminescence intensity are observed here for the first time at high fields between 5 and 18 T by the use of sensitive field modulation techniques. These fields are high enough to reach, the extreme quantum limit for electrons where only the lowest spin level of the lowest Landau level is populated. This spin polarization may have important consequences for the non-radiativve, Auger recombination probability in the EHL and is discussed in section 4.
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References
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© 1981 Springer-Verlag Berlin Heidelberg
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Skolnick, M.S. (1981). Electron-Hole Liquid in Ge in High Magnetic Field. In: Chikazumi, S., Miura, N. (eds) Physics in High Magnetic Fields. Springer Series in Solid-State Sciences, vol 24. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81595-9_26
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DOI: https://doi.org/10.1007/978-3-642-81595-9_26
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