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Interband Faraday and Kerr Effects in Semiconductors: An Analysis by Means of Equivalent Modulated Magneto-Optical Spectra of Ge and Si

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Physics in High Magnetic Fields

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 24))

Abstract

The magneto-optical (mo) properties of a (nonmagnetic) material in the Faraday configuration are all contained in either the complex Faraday effect or the complex (polar mo) Kerr effect. Each of these differential effects involves two complete spectra, one of the rotation ⊝F or ⊝K and one of the ellipticity ψF or ψK.

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References

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Author information

Authors and Affiliations

  1. Institut B für Physik und Hochmagnetfeldanlage, Technischen Universität Braunschweig, 3300, Braunschweig, Fed. Rep of Germany

    J. Metzdorf

Authors
  1. J. Metzdorf
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Editor information

Editors and Affiliations

  1. Institute for Solid-State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo, Japan

    Sōshin Chikazumi  & Noború Miura  & 

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© 1981 Springer-Verlag Berlin Heidelberg

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Metzdorf, J. (1981). Interband Faraday and Kerr Effects in Semiconductors: An Analysis by Means of Equivalent Modulated Magneto-Optical Spectra of Ge and Si. In: Chikazumi, S., Miura, N. (eds) Physics in High Magnetic Fields. Springer Series in Solid-State Sciences, vol 24. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81595-9_24

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  • DOI: https://doi.org/10.1007/978-3-642-81595-9_24

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-81597-3

  • Online ISBN: 978-3-642-81595-9

  • eBook Packages: Springer Book Archive

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