Abstract
There are various mechanisms that allow a defect to move through a lattice. These mechanisms belong to two classes, depending on whether the defect is substitutional or interstitial. An interstitial defect migrates by jumping from its original interstitial site to a neighboring equivalent one. This is illustrated in Fig.7.1 for a two-dimensional lattice, but in a real crystal the jumps occur, of course, in a three-dimensional lattice. The interstitial can also exchange with a lattice atom which in turn is displaced into a new interstitial site; this mechanism is called the interstitialcy or dumbell mechanism.
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© 1981 Springer-Verlag Berlin Heidelberg
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Lannoo, M., Bourgoin, J. (1981). Defect Migration and Diffusion. In: Point Defects in Semiconductors I. Springer Series in Solid-State Sciences, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81574-4_7
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DOI: https://doi.org/10.1007/978-3-642-81574-4_7
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