Abstract
This chapter is an introduction to the theory of deep electronic states in semiconductors. We shall use the tight-binding approximation which, in this context, has a great number of merits: a) it can describe the main physical properties of the bulk semiconductor; b) it leads to fairly simple calculations; and c) it gives an essentially correct description of simple defects such as the single vacancy. It is thus ideally suited to an introductory survey of the main electronic properties associated with defects.
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Lannoo, M., Bourgoin, J. (1981). Simple Theory of Deep Levels in Semiconductors. In: Point Defects in Semiconductors I. Springer Series in Solid-State Sciences, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81574-4_3
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DOI: https://doi.org/10.1007/978-3-642-81574-4_3
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