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Atomic Configuration of Point Defects

  • Michel Lannoo
  • Jacques Bourgoin
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 22)

Abstract

In this first chapter, we define the objects that we shall be dealing with throughout this textbook. The defects are defined by their chemical nature and their geometrical configuration. As will be seen in [1.1], the geometrical configuration, which includes the interaction of the defect with the lattice, i.e., the lattice rearrangement around the defect, can be experimentally obtained from “spectroscopic” measurements (electron paramagnetic resonance and optical techniques). Considerations on defect geometry are necessary from the beginning for two reasons: first, atomic configurations and electronic structures are not independent, and secondly, the symmetry allows one, through the use of group theory, to simplify the treatment of electronic structures.

Keywords

Basis Function Point Defect Irreducible Representation Symmetry Operation Character Table 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.1
    J. Bourgoin, M. Lannoo: Point Defects in Semiconductors II. Experimental Aspects, Springer Series in Solid State Sciences, Vol.35 (Springer, Berlin, Heidelberg, New York)Google Scholar
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Copyright information

© Springer-Verlag Berlin Heidelberg 1981

Authors and Affiliations

  • Michel Lannoo
    • 1
  • Jacques Bourgoin
    • 1
  1. 1.Laboratoire d’Etude des Surfaces et Interfaces, Physique des SolidesInstitut Superieur d’Electronique du NordLille CédexFrance

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