Atomic Configuration of Point Defects
In this first chapter, we define the objects that we shall be dealing with throughout this textbook. The defects are defined by their chemical nature and their geometrical configuration. As will be seen in [1.1], the geometrical configuration, which includes the interaction of the defect with the lattice, i.e., the lattice rearrangement around the defect, can be experimentally obtained from “spectroscopic” measurements (electron paramagnetic resonance and optical techniques). Considerations on defect geometry are necessary from the beginning for two reasons: first, atomic configurations and electronic structures are not independent, and secondly, the symmetry allows one, through the use of group theory, to simplify the treatment of electronic structures.
KeywordsEntropy Migration Hexagonal Bors Reso
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- 1.1J. Bourgoin, M. Lannoo: Point Defects in Semiconductors II. Experimental Aspects, Springer Series in Solid State Sciences, Vol.35 (Springer, Berlin, Heidelberg, New York)Google Scholar
- 1.2G. Burns, A.M. Glazer: Space Groups for Solid State Scientists (Academic, New York 1978)Google Scholar
- 1.4V. Heine: Group Theory and Quantum Mechanics (Pergamon, London 1960)Google Scholar
- 1.5R.M. Hochstraner: Molecular Aspects of Symmetry (Benjamin, New York 1966)Google Scholar
- 1.6B.K. Vainshtein: Modem Crystallography I, Symmetry of Crystals, Methods of Structural Crystallography, Springer Series in Solid State Sciences, Vol.15 (Springer, Berlin, Heidelberg, New York 1981)Google Scholar
- 1.7T.M. Morgan: Proc, 11th Intern. Conf. on the Physics of Semiconductors, Vol.2, ed. by M. Miasek (Elsevier, Amsterdam 1972) p.989Google Scholar
- 1.8G.L. Bir, G.E. Pikus: Symmetry and Strain Induced Effects in Semiconductors (Wiley, New York 1974)Google Scholar
- 1.10A.M. Stoneham: Theory of Defects in Solids (Clarendon Press, Oxford 1975) Chap.12Google Scholar