Abstract
It is now well-established that a finite density of states exists in the amorphous material band gap [1]. In order to determine the localized states in the bottom of the gap of amorphous Se, we have studied the dark and the photoconductivity of Se layers obtained by vacuum evaporation on a substrate remained at T = 290K.
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References
See for example N.F. Mott: Electronic and Structural Properties of Amorphous Semiconductor, ed. by P.C. Le Comber and J. Mort (Acad.Press, London 1973) p. 1.
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© 1979 Springer-Verlag Berlin Heidelberg New York
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Vautier, C., Carles, D., Viger, C. (1979). Localized States in the Gap of Amorphous Selenium. In: Gerlach, E., Grosse, P. (eds) The Physics of Selenium and Tellurium. Springer Series in Solid-State Sciences, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81398-6_34
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DOI: https://doi.org/10.1007/978-3-642-81398-6_34
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