Photoelectronic Behavior of a-Se and some a-Se:As Alloys in Their Glass Transition Regions
The glass transition is a thermodynamic and kinetic phenomenon common to all amorphous solids. When heated into the glass transition region from below all glassy solids rapidly acquire new configurational degrees of freedom as a result of which they undergo characteristic changes in static structure, thermodynamic parameters, and in dynamic states of their constituent molecules. In the past investigations of glass transition related phenomena have tended to focus on thermodynamic and structural issues in electronically inactive media. In the a-Se:As alloy system we have exploited an opportunity to investigate the influence of this primary process on photo-electronic behavior. Coordinated measurements of dielectric response, hole and electron drift mobilities, photogeneration efficiency, space charge limited currents and xerographic cycling have all been carried out.
KeywordsStructural Relaxation Alloy Film Drift Mobility Shallow Trap Glass Transition Region
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