Two Types of Carriers in Tellurium

Abstract

Some of the results of the tellurium galvanomagnetic investigations can’t be understood on the basis of the model of the homogeneous nondegenerated semiconductor with one type of carriers [1...7]. Some of these results are:the anomalously strong dependence of Hall coefficient R on magnetic field at liquid helium temperatures [1,3,4], and the absence of the saturation of the mag-netoresistance Δρ(H)/ρ_o in magnetic field up to 30 kOe [3,5]. These features are more pronounced in slightly doped or undoped crystals (p≃5.10¹⁵cm^-3). Efforts were made [1,4,8,9] to explain some of the mentioned results introducing formally in the consideration the second type of carriers (slow holes)