Zusammenfassung
Außer der üblicherweise in einem angeregten Elektronensystem beobachtbaren spontanen Strahlungsemission tritt bei Vorhandensein eines entsprechenden Strahlungsfeldes eine zusätzliche Emission auf, die den eigentlich inversen Vorgang zur Absorption darstellt. Diese bereits im Kapitel 2 beschriebene induzierte oder stimulierte Strahlungsemission [6.1] wurde bereits 1917 von A. Einstein bei einer theoretischen Ableitung des Planckschen Strahlungsgesetzes postuliert sowie von R. Ladenburg und H. Kopfermann erstmals 1928 experimentell nachgewiesen.
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Literatur zu Kapitel 6
Einstein; A.: Über die Quantentheorie der Strahlung. Phys. Z. 18 (1917) 121–128
Weber, J.: Amplification of Microwave Radiation by Substances not in Thermal Equilibrium. Trans. IRE, PGED 3 (1953) 1–4
Maiman: Stimulated Optical Radiation in Ruby. Nature 187 (1960) 493–494
Bäsov, N.G.; Krokhin, O.N.; Popov, Y.M.: Indirect Interband Transitions and Radiation Absorption by Free Carriers; in Advances in Quantum Electronics, (Ed. Singer, J.R.) London: Columbia University Press 1961, S. 500–506, siehe Diskussionsbemerkung
Engler, W.E.; Garfinkel, M.: Characteristics of a Continuous High Power GaAs-Junction Laser. J. Appl. Phys. 35 (1964) 1736–1741
Pilkuhn, M., Rupprecht, H.; Woodall, J.: Continuous Stimulated Emission from a GaAs-Diode at 77K. Proc. IEEE 51 (1963) 12–43
Dyment, J.C.; D’Asaro, L.A.: Continuous Operation of GaAs Junction Lasers on Diamond Heat Sinks at 200 K. Appl. Phys. Lett. 11 (1967) 292–294
Ripper, J.E.; Dyment, J.C.; D’Asaro, L.A.; Paoli, T.L.: Stripe-Geometry Double Heterostructure Junction Lasers: Mode Structure and cw Operation Above Room Temperature. Appl. Phys. Lett. 18 (1971) 155–157
Mettler, K.: Effect or Dislocations on the Degradation of Silicon-Doped GaAs Luminescent Diodes. Siemens Forsch. — u. Entwickl. Ber. 1 (1972) 274–278
Petroff, P.; Hartman, R.L.: Defect Structure Introduced During Operation of Heterojunction GaAs Lasers. Appl. Phys. Lett. 23 (1973) 469–471
Hartman, R.L.; Dyment, J.C.; Hwang, C.J.; Kuher, M.: Continuous Operation of GaAs-Ga1−xAlx As Double-Heterostructure Lasers with 30°C Half-Lifes Exeeding 1000h. Appl. Phys. Lett. 23 (1973) 181–183
Nannichi, Y.; Hayashi, I.: Degradation of (Ga,AI)As Double Heterostructure Diode Lasers. J. Cryst. Growth 27 (1974) 126–132
Dyment, J.C.; Nash, I.R.; Hwang, C.J.; Rozgonyi, G.A.; Hartman, R.L., Marcos, H.M.; Haszko, S.E.: Threshold Reduction by the Addition of Phosphorus to the Ternary Layers of DoubleHeterostructure GaAs Lasers. Appl. Phys. Lett. 24 (1974) 481–484
Kun, H.; Namizaki, H.; Ishii, M.; Ito, A.: Continuous Operation Over 10 000 h of GaAs/GaA1As Double-Heterostructure Laser without Lattice Mismatch Compensation. Appl. Phys. Lett. 27 (1975) 138–139
Basov, N.G.; Bogdankovich, O.V.: Excitation of Semiconductor Lasers by a Beam of Fast Electrons in “Radiative Recombination in Semiconductors”, 7th Intern. Conf. on the Physics of Semiconductors. Paris: Dunod 1965, S. 225–233
Benoit à la Guillaume, C.; Debever, J.M.: Effect Laser par bombardement electronique. Siehe [6.13], S. 255–257
Hurwitz, C.E.; Keyes, R.J.: Electron-Beam-Pumped GaAs-Laser. Appl. Phys. Lett. 5 (1964) 139–141
Klein, C.A.: Threshold Considerations for Electron-Beam-Pumped GaAs-Lasers. Bull. Am. Phys. Soc. 10 (1965) 387–388
Hora, H.: Calculations of Laser Excitation in a GaAs Anode by Slow Electrons. Z. Naturf. 20a (1965) 543–548
Weiser, K.; Woods, J.F.: Evidence for Avalanche Injection Laser in p-Type GaAs. Appl. Phys. Lett. 7 (1965) 225–228
Phelan, R.J. Jr.; Rediker, R.H.: Optically Pumped Semiconductor Laser. Appl. Phys. Lett. 6 (1965) 70–71
Melngailis, I.: Optically Pumped Indium Arsenide Laser. IEEE J. Quant. Electron. QE-1 (1965) 104–105
Kelley, C.E.: Interactions Between Closely Coupled GaAs Injection Lasers. IEEE Trans. Electron Dev. 12 (1965) 1–4
Gürs, K.: Der optisch gepumpte Festkörperlaser, S. 119–120
D. Rosenberger: Der Gaslaser, S. 225–228. In: Laser (Hrsg. Kleen, W.; Müller, R.) Berlin, Heidelberg, New York: Springer 1960
Krokhin, O.N.; Popov, Y.M.: Slowing Down Time of Non Equilibrium Current Carriers in Semiconductors. Soy. Phys. JETP 11 (1960) 1144–1146
Göbel, G.: Recombination Without k-Selection Rules in Dense Electron-Hole Plasmas in High-Purity GaAs Lasers. Appl. Phys. Lett. 24 (1974) 492–494
Hildenbrand, O.; Faltermeier, B.O.; Pilkuhn, M.H.: Direct Determination of Reduced Band Gap and Chemical Potential in High-Purity GaAs. Sol. State Commun. 19 (1976) 841–849
Pankove, J.I.; Annavedder, E.K.: Nomograph of the Temperature Dependence of the Fermi Level in a Degemerate Parabolic Band. J. Appl. Phys. 36 (1965) 39–48
Lasher, G.J.: Threshold Relations and Diffraction Loss for Injection Lasers. IBM J. 7 (1963) 58–61
Lasher, G.; Stern, F.: Spontaneous and Stimulated Recombination Radiation in Semiconductors. Phys. Rev. 133 (1964) A553–A563
Pilkuhn, M.H.: Fundamentals of stimulated Emission in Semiconductors. J. Lumin. 7 (1973) 269–283
Ettenberg, M.; Kressel, H.: Dependence of Threshold Current Density and efficiency on Fabry-Perot Cavity Parameters: Single Heterojunction (AIGa)As-GaAs Laser Diode. J. Appl. Phys. 43 (1972) 1204–1210
Stern, F.: Gain-Current Relation for GaAs Lasers with n-Type and Undoped Active Layers. IEEE J. Quant. Electron. 9 (1973) 290–294
Stern, F.: Dispersion of the Index of Refraction Near the Absorption Edge of Semiconductors. Phys. Rev. 133 (1964) A1653–A1664
Engler, W.E.; Garfinkel, M.: Temperature Effects in Coherent GaAs Diodes. J. Appl. Phys. 34 (1963) 2746–2750
Zachos, T.H.; Ripper, J.E.: Theory of Transverse Modes in GaAs Junction Lasers. IEEE J. Quant Electron. 4 (1968) 167
Hakki, B.W.: Striped GaAs Lasers: Mode Size and Efficiency J. Appl. Phys. 46 (1975) 2723–2730
Yonezu, H.; Sakuma, I.; Kobayashi, K.; Kamejima, T.; Ueno, M.; Nannichi, Y.: A GaAs-A1xGa1−xAs Double Heterostructure Planar Stripe Laser. Jap. J. Appl. Phys. 12 (1973) 1585–1592
Dyment, J.C.: Hermite-Gaussian Mode Patterns in GaAs-Junction Lasers. Appl. Phys. Lett. 10 (1967) 84–86
Lida, S.; Takata, K.; Unno, Y.: Spectral Behaviour Linewidth of (GaAI)As-GaAs Double Hterostructure Lasers at Room Temperature with Stripe Geometry Configuration. IEEE J. Quant. Electron. 9 (1973) 361–366
Armstrong, J.A.; Smith, A.W.: Interferometric Measurement of Line Width and Noise in GaAs Lasers. Appl. Phys. Lett. 4 (1965) 196–198
Ahearn, W.E.; Crowe, J.W.: Linewidth Measurements of cw Gallium Arsenide Lasers at 77K. IEEE J. Quant. Electron. 2 (1966) 597–602
Lindström, C.; Janson, M.: 13 gym Wide Stripe cw GaAs/GaA1As DH Lasers Linear to More than 10 mW. Electron. Lett. 14 (1978) 172–174
Casey, H.C. Jr.; Panish, M.B.; Merz, J.L.: Beam Divergence of the Emission from Double-Heterostructure Injection Lasers. J. Appl. Phys. 44 (1973) 5470–5475
Ulbrich, R.; Pilkuhn, M.H.: Londitudinal Photon Flux Distribution in Low-Q Semiconductor Lasers. Appl. Phys. Lett. 16 (1970) 516–518
Harth, W.; Siemsen, D.: Modulation Characteristics of Injection Lasers Including Spontaneous Emission - 1. Theory. AEU Arch. f. Elektronik u. Ubertr. (Electronics and Communication) 30 (1976) 343–348
Winstel, G.; Mettler, K.: Zur Trägerrekombination in einem GaAs-Injektionslaser. Siehe [6.13] S. 183–193. Nachdruck: Siemens Forsch. u. Entwickl. Ber. (1965)
Adams, M.J.: Rate Equations and Transient Phenomena in Semiconductor Lasers. Optoelectron. 5 (1973) 201–215
Suematsu, Y.; Akiba, S.; Hong, T.: Measurements of Spontaneous Factor of AlGaAs Double-Hetero-Structure Semiconductorlasers. IEEE J. Quant. Electron. 13 (1977) 596–600
Boers, P.M.; Vlaaardingerbroek, M.T.; Danielsen, M.: Dynamic Behaviour of Semiconductor Lasers. Electron. Lett. 11 (1975) 206–208
Hakki, B.W.; Mode Gain and Junction Current in GaAs Under Lasing Conditions. J. Appl. Phys. 45 (1974) 288–294
Adams, M.J.: A Theory of Oscillations in the Output of GaAs Junctions Lasers. Phys. status solidi (a) 1 (1970) 143–152
Goodwin, A.R.; Thompson, G.H.P.: Superlinear Dependence of Gain on Current Density in GaAs Injection Lasers. IEEE J. Quant. Electron. 6 (1970) 311–312
Pinkas, E.; Miller, B.I.; Hayashi, I.; Foy, P.W.: GaAs-A1xGa1−xAs Double Heterostructure Lasers-Effect of Doping on Lasing Characteristics of GaAs. J. Appl. Phys. 43 (1972) 2827–2835
Gürs, K.: Der Laser als Verstärker und Oszillator, S. 90–93. In: Laser (Hrsg. Kleen, W.; Müller, R.) . Berlin, Heidelberg, New York: Springer 1969
Konnerth, K.L.; Lanza, C.: Delay between Current Pulse and Light Emission of a Gallium Arsenide Injection Laser. Appl. Phys. Lett 4 (1964) 120–121
Ettenberg, M.; Kressel, H.: Interfacial recombination at (AlGa)As/GaAs Heterojunction Structures. J. Appl. Phys. 47 (1976) 1538–1544
Harth, W.: Properties of Injection Lasers at Large-Signal Modulation. AEU Arch. f. Electronik u. Ubertr. (Electronics and Communication) 29 (1975) 149–152
Danielsen, M.: A Theoretical Analysis for Gigabit/Second Pulse Code Modulation of Semiconductor Lasers. IEEE J. Quant. Electron. 12 (1976) 657–660
Müller, R.: Modulationsverfahren, S. 423–458. In: Laser (Hrsg. Kleen, W.; Müller R.). Berlin, Heidelberg, New York: Springer 1969
Eguchi, R.G.; Steier, W.H.; Mann, M.M.; Lacina, W.B.: Simultaneous Mode Locking and Pulse Coupling of the CO2 Laser. Appl. Phys. Lett. 18 (1971) 406–408
Kogelnik, H.; Schmidt, R.V. : Switched Directional Couplers. IEEE J. Quant. Electron. 12 (1976) 396–398
Reinhart, F.K.; Logan, R.A.: Integrated Electro-Optic Intra-cavity Frequency Modulation of Double Heterostructure Injection Lasers. Appl. Phys. Lett. 27 (1975) 532–534
Tien, P.K.: Integrated Optics and New Wave Phenomena in Optical Waveguides. Rev. Mod. Phys. 49 (1977) 361–420
Petermann, K.: Theoretical Analysis of Spectral Modulation Behaviour of Semiconductor Injections Lasers. Opt. and Quant. Electron. 10 (1978) 233–242
Siemsen, D.; Angerstein, J.: Investigation of the Optical Behaviour of GaAs Lasers Operated with Pulse and Sinusoidal Modulation. Electron. Lett. 12 (1976) 432–434
Tien Pei Lee, Dentai, A.G.: Power and Modulation Bandwidth of GaAs-AIGaAs High Radiance LED’s for Optical Communication Systems. IEEE J. Quant. Electron. 14 (1978) 150–159
Heinen, J.; Huber, W.; Harth, W.: Light-Emitting Diodes with a Modulation Bandwidth of More than 1 GHz. Electron. Lett. 12 (1976) 553–554
Harth, W.; Huber, W.; Heinen, J.: Frequency Response of GaA1As Light-Emitting Diodes. IEEE Trans. Electron. Dev. 23 (1976) 478–480
Zucker, J.: Closed-Form Calculation of the Transient Behaviour of (Al,Ga)As Double-Heterojunction LED’s. J. Appl. Phys. 49 (1978) 2543–2545
Harth, W.; Amann, M.C.: Modulation Characteristics of Double-Heterostructure Superluminescent Diodes. Electron. Lett. 13 (1977) 291
Hayashi, I.; Panish, M.B.; Reinhart, F.K.: GaAs-Al Ga1−xAs Double Heterostructure Injection Lasers. J. Appl. Phys. 42 (1971) 1929–1941
Lockwood, H.F.; Kressel, H.; Sommers, H.S. Jr.; Hawrylo, F.Z.: An Efficient Large Optical Cavity Injection Laser. Appl. Phys. Lett. 17 (1970) 499–502
Kressel, H.; Ettenberg, M.: Low-Threshold Double Heterojunction A1GaAs/GaAs Laser Diodes: Theory and experiment. J. Appl. Phys. 47 (1976) 3533–3537
Thompson, G.H.B.; Henshall, G.D.; Whiteaway, J.E.A.; Kirkby, P.A.: Narrow-Beam Five-Layer (GaAI)AS/GaAs Hterostructure Lasers with Low Threshold and High Preak Power. J. Appl. Phys. 47 (1976) 1501–1514
Tsang, W.T.: The Effects of Lateral Current Speeding, Carrier Out-Diffusion and Optical Mode Lasers on the Threshold Current Density of GaAs-Al Ga1−xAs Stripe-Geometry DH-Lasers. J. Appl. Phys. 49 (1978) 1031–1044
Kobayashi, T.; Kawaguchi, H.; Furukawa, Y.: Lasing Characteristics of Very Narrow Planar Stripe Lasers. Jap. J. Appl. Phys. 16 (1977) 601–607
Mettler, K.; Zschauer, K.-H.; Westermeier, H.; Wolf, D.-H.; Pawlik, D.; Meixner, H.: Laserdiode. Forschungsbericht des Bundesministeriums für Forschung- and Technologie and der Siemens AG. April 1968, Kz.NT 565 B
Angerstein, J.; Siemsen, D.: Modulation Charakteristics of Injection Lasers Including Spontaneous Emission - 2. Experiment. AEU Arch. f. Electronik u. Ubertr. (Electronics and Communications) 30 (1976) 477–480
Mettler, K.; Pawlik, D.; Westermeier, H.; Zschauer, K.-H.: GaAs/(GaAI)As-Streifenstrukturlaser für optische Nachrichtensysteme hoher Bitrate. DFG-Kolloq. f. opt. Nachrichtentechnik, Bochum, Febr. 1978
Tsang, W.T.; Logan, R.A.: Lateral-Current Confinement in a GaAs Planar Stripe-Geometrie and Channeled Substrate Buried DH-Laser Using Reverse-Biased p-n Junctions. J. Appl. Phys. 49 (1978) 2629–2637
Kobayashi, K.; Lang, R.; Yonezu, H.; Matsumoto, Y.; Shinohara, T.; Sakuma, I.; Suzuki, T.; Hayashi, I.: Unstable Horizontal Transverse Modes and Their Stabilization with a New Stripe Structure. IEEE J. Quant. Electron. 13 (1977) 659–661
Yonezu, H.; Matsumoto, Y.; Shinohara, T.; Sakuma, I.; Suzuki, T.; Kobayashi, K.; Lang, R.; Nannichi, Y.; Hayashi, I.: New Stripe Geometry Laser with High Quality Lasing Characteristics by Horizontal Transverse Mode Stabilization. - A Refraction Index Guiding with Zn Doping. Jap. J. Appl. Phys. 16 (1977) 209–210
Aiki, K.; Nakamura, M.; Kuroda, T.; Umeda, J.: Channeled-Substrate Planar Structure (A1Ga)As Junction Lasers. Appl. Phys. Lett. 30 (1977) 649–651
Figueroa, L.; Wang, S.: Curved Junction Stabilized Filament (CJSF) Double Heterostructure Injection Laser. Appl. Phys. Lett. 32 (1978) 55–57
Botez, D.; Zory, P.: Constricted Double-Heterostructure (AlGa)As Diode Laser. Appl. Phys. Lett. 32 (1978) 261–263
Scifres, D.R.; Streifer, W.; Burnham, R.D.: Curved Stripe GaAs: GaAlAs Diode Lasers and Waveguides. Appl. Phys. Lett. 32 (1978) 231–234
Tsukada, T.: GaAs-Ga1−xA1 As Buried-Heterostructure Injection Lasers. J. Appl. Phys. 45 (1974) 4899–4906
Kirkby, P.A.; Thompson, G.H.B.: Channeled Substrate Buried Heterostructure GaAs-(GaAl)As Injection Lasers. J. Appl. Phys. 47 (1976) 4578–4589
Burnham, R.D.; Scifres, D.R.: Etched Buried Heterostructure GaAs/GaA1As Injection Lasers. Appl. Phys. Lett. 27 (1975) 510–511
Itoh, K.; Asaki, K.; Inone, M.; Teramoto, E.: Embedded Stripe GaAs-GaAlAs Double-Heterostructure Lasers with Polycrystalline GaAsP Layers. IEEE J. Quant. Electron. 13 (1977) 623–627
Tsang, W.T.; Logan, R.A.; Ilegems, M.: High-Power Fundamental-Transverse-Mode Stripe Buried Heterostructure Lasers with Linear Ligh-Current Characteristics. Appl. Phys. Lett. 32 (1978) 311–314
Nagano, M.; Kasahara, K.: Dynamic Porperties of Transverse Junction Stripe Lasers. IEEE J. Quant. Electron. 13 (1977) 632–637
Namizaki, H.; Kan, H.; Ishii, M.; Ito. A.: Transverse-JunctionStripe-Geometry Double-Heterostructur Lasers with Very Low Threshold Current. J. Appl. Phys. 45 (1975) 2785–2786
Kumabe, H.; Tanaka, T.; Namizaki, H.; Ishii, M.; Susaki, W.: High Temperature Single-Mode cw Operation with a Junction-Up TJS Laser. Appl. Phys. Lett. 33 (1978) 38–39
Lee, C.P.; Margalit, S.; Yariv, A.: GaAs-GaA1As Injection Lasers on Semi-Insulating Substrates Using Laterally Diffused Junctions. Appl. Phys. Lett. 32 (1978) 410–412
Scifres, D.R.; Streifer, W.; Burnham, R.D.: Leaky Wave Room-Temperature Double Heterostructure GaAs:GaAlAs Diode Laser. Appl. Phys. Lett 29 (1976) 23–24
Kajimura, T.; Saito, K.; Shige, N.; Ito, R.: Leaky-Mode Buried-Heterostructure AlGaAs Injection Lasers. Appl. Phys. Lett. 30 (1977) 590–591
Coloman, J.J.; Holonyak, N. Jr.; Ludowise, M.J.; Wright, P.D.: In1−xGaxP1−zAs, Double Heterojunction Lasers. J. Appl. Phys. 47 (1976) 2015–2018
Coloman, J.J.; Holonyak, N. Jr.; Ludowise, M.J.; Wright, P.D.; Chin, R.; Groves, W.O.; Keune, D.L.: Pulsed Room-Temperature Operation of In1−x Gax P1−z Asz Double Heterojunction Lasers at High Energy. Appl. Phys. Lett. 29 (1976) 167–169
Hsieh, J.J.; Shen, C.C.: Room-Temperature cw Operation of Buried-Stripe Double-Heterostructure GaInAsP/InP Diode Lasers. Appl. Phys. Lett. 30 (1977) 429–431
Hsieh, J.H.; Rossi, J.A.; Donneley, J.P.: Room-Temperature cw operation of GaInAsP/InP Double Heterostructure Diode Laser Emitting at 1, 1 4m. Appl. Phys. Lett. 28 (1976) 709–711
Kressel, H.; Olsen, G.H.; Nuese, C.J.: Visible GaAs0.7P0.3 cw Heterojunction Lasers. Appl. Phys. Lett 30 (1977) 249–251
Chin, R.; Holonyak, N. Jr.; Shichijo, H.H.; Groves, W.O.; Keune, D.L.; Rossi, J.A.: GaAs1−yPy Heterojunction Lasers. J. Appl. Phys. 48 (1977) 3991–3993
Nahory, R.E.; Pollack, M.A.; Abrokwah, J.K.: Threshold Characteristics and Extended Wavelength Operation of GaAs1−xGaAs1−xSbx/AlyGa1−yAs1−xsbx Double-Heterostructure Lasers. J. Appl. Phys. 48 (1977) 3988–3990
Pollack, M.A.; Nahory, R.E.: CW Double Heterostructure LED and Laser Sources for the 1µm Wavelength Region. Int. Conf. on Integrated Optics, Salt Lake City, 1976
Hesse, J.; Preier, H.: Lead Salt Laser Diodes. In: Festkörperprobleme XV. (Hrsg. Queisser, H.J.) Braunschweig: Vieweg 1975, S. 229–251
Linden, K.J.; Nill, K.W.; Butler, J.F.: Single Heterojunction Lasers of PbS1−xSex and Pb1−xSnxSe with Wide Tunability. IEEE J. Quant Electron. 13 (1977) 720–724
Lo, W.: Homojunction Lead-Tin-Telluride Diode Lasers with Increased Frequency Tuning Range. IEEE J. Quant Electron. 13 (1977) 591–595
Groves, S.H.; Nill, K.W.; Strauss, A.J.: Double Heterostructure Pb1−xSn.Te-PbTe Lasers with cw operation at 77K. J. Appl. Phys. Lett 25 (1974) 331–333
Kogelnik, H.; Shank, C.V.: Stimulated Emission in a Periodic Structure. Appl. Phys. Lett. 18 (1971) 152–154
Nakamura, M.; Aiki, K.; Umeda, J.: CW Operation of Distributed-Feedback GaAs-GaA1As Diode Lasers at Temperatures up to 300 K. Appl. Phys. Lett. 27 (1975) 403–405
Burnham, R.D.; Scifres, D.R.; Streifer, W.: Distributed Feedback Buried Heterostructure Diode Laser. Appl. Phys. Lett. 29 (1976) 287–289
Walpole, J.N.; Calawa, A.R.; Chinn, S.R.; Groves, S.H.; Harman, T.C.: Distributed Feedback Pb1−xSnx-Te Double heterojunction Lasers. Appl. Phys. Lett. 29 (1976) 307–309
Scifres, D.R.; Burnham, R.D.; Streifer, W.: Output Coupling an and Distributed Feedback Utilizing Substrate Corrugation in Double-Heterostructure GaAs Lasers. Appl. Phys. Lett. 27 (1975) 295–297
Aiki, K.; Nakumura, M.; Umeda, J.: Frequency Multiplexing Light Source with Monolithically Integrated Distributed-Feedback Diode Lasers. Appl. Phys. Lett. 29 (1976) 506–508
Merz, J.L.; Logan, R.A.: Integrated GaAs-AlxGa1−xAs Injection Lasers and Detectors with Etched reflectors. Appl. Phys. Lett. 30 (1977) 530–533
Lee, C.P.; Margalit, S.; Ury, I.; Yario, A.: Integration of an Injection Laser with a Gunn Oscillator on a Semi-Insulating GaAs Substrate. Appl. Phys. Lett. 32 (1978) 806–807
Merz, J.L.; Logan, R.A.: Dual-Beam Laser: A GaAs Double-Cavity Laser with Branching Output Waveguides. Appl. Phys. Lett. 32 (1978) 661–663
Scifres, D.R.; Burnham, R.D.; Streifer, W.: Branching Waveguide Coupler in a GaAs/GaA1As Injection Laser. Appl. Phys. Lett. 32 (1978) 658–661
Shams, M.K.; Namizaki, H.; Wang, S.: pn-Junction Detector Directly Integrated with (Ga1−xAlx )As LOC-DBR Laser. Appl. Phys. Lett 32 (1978) 179–181
Shams, M.K.; Namizaki, H.; Wang, S.: Monolithic Integration of GaAs-(GaAI)As Light Modulators and Distributed Bragg-Reflector Lasers. Appl. Phys. Lett. 32 (1978) 314–316
Campbell, J.C.; DeWinter, J.C.; Pollack, M.A.; Nahory, R.E.: Buried Heterojunction Electroabsorption Modulator. Appl. Phys. Lett. 32 (1978) 471–473
Phelan, R.J.; Rediker, R.H.: Optically Pumped Semiconductor Laser. Appl. Phys. Lett. 6 (1965) 70–71
Kawabe, M.; Kotani, H.; Matsuda, K.; Namba, S.: Heterostructure CdS1−xSexCdS Surface Lasers for Integrated Optics. Appl. Phys. Lett. 26 (1975) 46–48
Wolford, D.J.; Streetman, B.G.; Nelson, R.J.; Holonyak, N.Jr.: Stimulated Emission on Nx (“A-Line”) Recombination Transitions in Nitrogen Implanted GaAs1−xPx (x = 0,37). Appl. Phys. Lett. 28 (1976) 711–713
Makita, Y.; Gonda, S.; Ijuin, H.: Stimulated and Laser Emission Involving Nitrogen Isoelectronic Impurities in AlxGa1−xAs (x = 0, 39, 77K). Appl. Phys. Lett. 29 (1976) 309–311
Miller, R.C.; Nordland, W.A. Jr.; Logan, R.A.; Johnson, L.F.: Optically Pumped Taper-Coupled GaAs-AlxGa1−xAs Laser with a Second-Order Bragg Reflector. J. Appl. Phys. 49 (1978) 539–542
á la Guillaume, C.B.; Debever, J.M.: Effet Laser Dans L’Arseniure D ‘Indium par Bombardement Electronique. Sol. State Commun. 2 (1964) 145–147
Popov, Y.M.: Semiconductor Lasers. Appl. Opt. 6 (1967) 1818–1824
Hurwitz, C.E.: Efficient Ultraviolett Laser Emission in ElectronBeam-Excited ZnS. Appl. Phys. Lett. 9 (1966) 116–118
Gooch, C.H.: The Thermal Properties of Gallium Arsenide Laser Structures. IEEE J. Quant. Electron. 4 (1968) 140–143
Quine, J.P.; Tomiyasu, K.; Younger, C.: Pulse Modulation or Gallium Arsenide Injection Luminescent Diode Laser. Proc. IEEE 51 (1963) 1141–1142
Mayburg, S.: Temperature Limitation on Continuous Operation of GaAs Lasers. J. Appl. Phys. 34 (1963) 3417–3418
Joyce, W.B.; Dixon, R.W.: Thermal Resistance of Heterostructure Lasers. J. Appl. Phys. 46 (1975) 855–862
Kobayshi, T.; Iwane, G.: Three Dimensional Thermal Analysis of Double-Heterostructure Semiconductor Lasers. Jap. J. Appl. Phys. 16 (1977) 1403–1408
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Winstel, G., Weyrich, C. (1981). Halbleiterlaser. In: Optoelektronik I. Halbleiter-Elektronik, vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81377-1_6
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