Semiconductor Tunneling, Bound Levels and Band Structure

  • D. C. Tsui
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 4)

Abstract

Bound levels due to quantum size effects in solids exist in a variety of physical systems. These include space-charge layers at semiconductor surfaces, thin films, and thin films bounded by solid-solid interfaces such as the normal metal-superconductor interface, the semiconductor-semiconductor interface, or the semiconductor-insulator interface. The discovery of such bound levels and the determination of their splitting were in most cases accomplished by utilizing the electron tunneling technique. This talk gives a survey of the experimental studies of bound levels and the related band structure effects by electron tunneling.

Keywords

Wolfram 

Copyright information

© Springer-Verlag Berlin Heidelberg 1978

Authors and Affiliations

  • D. C. Tsui
    • 1
  1. 1.Bell Telephone LaboratoriesMurray HillUSA

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