Abstract
Photoconductivity methods have been used to investigate silicon implanted with doses of 1013, 1014 B/cm2 of 100 keV. Beside the photoconductivity band associated with the divacancy a photoconductivity level at ~0.4 eV is detected in the spectrum. This level has been associated with boron interstitial atoms in sites of trigonal symmetry in boron doped silicon irradiated with electrons. Annealing experiments are performed up to 330 °C.
Results are complicated by the poor electrical isolation between the implanted layer and the substrate; therefore the substrate gives a certain contribution to the photoconductivity.
This work was supported in part by D.G.R.S.T.
Laboratoire associé au C.N.R.S.
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© 1971 Springer-Verlag, Berlin · Heidelberg
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Nétange, B., Cherki, M., Baruch, P. (1971). Photoconductivity of Boron Implanted Silicon. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_7
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DOI: https://doi.org/10.1007/978-3-642-80660-5_7
Publisher Name: Springer, Berlin, Heidelberg
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