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Energy Levels of Defects in Ion Implanted Silicon

  • D. Eirug Davies
  • S. Roosild
Conference paper

Abstract

Thermal stimulated currents and the temperature dependence of dark leakage currents in ion irradiated diffused junctions have been used to establish defect energy levels in low dose ion implanted silicon. Such implants lead to the creation of at least seven different levels whose depth range from .25 eV to close to midgap. Defect annealing occurs in several different stages while some of the defects initially exhibit a pronounced increase in concentration on heat treatment above room temperature.

Keywords

Space Charge Region Minority Carrier Lifetime Annealing Behavior Thermally Stimulate Current Annealing Stage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    Mayer, J.W., Erikson, L., Davies, J.A.: Ion Implantation in Semiconductors, Academic Press, N.Y. (1970).Google Scholar
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    Davies, D.E., Roosild, S.: Appl. Phys. Lett., June 1971.Google Scholar

Copyright information

© Springer-Verlag, Berlin · Heidelberg 1971

Authors and Affiliations

  • D. Eirug Davies
    • 1
  • S. Roosild
    • 1
  1. 1.Air Force Cambridge Research LaboratoriesAir Force Systems CommandBedfordUSA

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