Energy Levels of Defects in Ion Implanted Silicon
Thermal stimulated currents and the temperature dependence of dark leakage currents in ion irradiated diffused junctions have been used to establish defect energy levels in low dose ion implanted silicon. Such implants lead to the creation of at least seven different levels whose depth range from .25 eV to close to midgap. Defect annealing occurs in several different stages while some of the defects initially exhibit a pronounced increase in concentration on heat treatment above room temperature.
KeywordsPhosphorus Recombination Stein Verse
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