Ion Implanted p-n Junctions in Near Intrinsic n-Type Silicon for Nuclear Particle Detectors

  • J. H. Howes


This paper describes the application of ion implantation to producing p-n junctions in high resistivity n-type silicon, for the fabrication of detectors used in low energy X-ray spectrometry.


Reverse Current Surface Barrier Reverse Voltage Type Silicon Groove Geometry 
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Copyright information

© Springer-Verlag, Berlin · Heidelberg 1971

Authors and Affiliations

  • J. H. Howes
    • 1
  1. 1.Electronics and Applied Physics DivisionA.E.R.E.HarwellUK

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