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Ion Implanted p-n Junctions in Near Intrinsic n-Type Silicon for Nuclear Particle Detectors

  • J. H. Howes

Abstract

This paper describes the application of ion implantation to producing p-n junctions in high resistivity n-type silicon, for the fabrication of detectors used in low energy X-ray spectrometry.

Keywords

Reverse Current Surface Barrier Reverse Voltage Type Silicon Groove Geometry 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    Coates, D.G.: Phil. Mag. 16, 1179–84 (1967).CrossRefGoogle Scholar
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    Coates, D.G.: Physica Status Solidi 27, No.1 (1968).Google Scholar
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    Wolf, E.D., Hunsperger, R.G.: Appl. Phys. Lett. 16 No. 12, June 1970.Google Scholar
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    Caywood, J.M., Mead, C.A., Meyer, J.W.: Nuc. Inst. Meth. 79, 329–332 (1970).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag, Berlin · Heidelberg 1971

Authors and Affiliations

  • J. H. Howes
    • 1
  1. 1.Electronics and Applied Physics DivisionA.E.R.E.HarwellUK

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