Ion Implanted p-n Junctions in Near Intrinsic n-Type Silicon for Nuclear Particle Detectors

  • J. H. Howes


This paper describes the application of ion implantation to producing p-n junctions in high resistivity n-type silicon, for the fabrication of detectors used in low energy X-ray spectrometry.


GaAs Gallium Germanium Verse Ectron 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Coates, D.G.: Phil. Mag. 16, 1179–84 (1967).CrossRefGoogle Scholar
  2. 2.
    Coates, D.G.: Physica Status Solidi 27, No.1 (1968).Google Scholar
  3. 3.
    Wolf, E.D., Hunsperger, R.G.: Appl. Phys. Lett. 16 No. 12, June 1970.Google Scholar
  4. 4.
    Caywood, J.M., Mead, C.A., Meyer, J.W.: Nuc. Inst. Meth. 79, 329–332 (1970).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag, Berlin · Heidelberg 1971

Authors and Affiliations

  • J. H. Howes
    • 1
  1. 1.Electronics and Applied Physics DivisionA.E.R.E.HarwellUK

Personalised recommendations