Ion Implanted p-n Junctions in Near Intrinsic n-Type Silicon for Nuclear Particle Detectors

  • J. H. Howes

Abstract

This paper describes the application of ion implantation to producing p-n junctions in high resistivity n-type silicon, for the fabrication of detectors used in low energy X-ray spectrometry.

Keywords

GaAs Gallium Germanium Verse Ectron 

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References

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    Wolf, E.D., Hunsperger, R.G.: Appl. Phys. Lett. 16 No. 12, June 1970.Google Scholar
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    Caywood, J.M., Mead, C.A., Meyer, J.W.: Nuc. Inst. Meth. 79, 329–332 (1970).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag, Berlin · Heidelberg 1971

Authors and Affiliations

  • J. H. Howes
    • 1
  1. 1.Electronics and Applied Physics DivisionA.E.R.E.HarwellUK

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