Application of Ion Implantation to N-P-N-Transistors

  • J L. Assémat
Conference paper

Abstract

Transitors were made either entirely through ion implantation or by base ion implantation before, or after emitter diffusion. Multi-implantation process through a thin layer of SiO2 was used: 30, 54, 100 keV for phosphorus, and 16, 30, 55, 100 keV for boron; the doses used give a maximum doping of 5 · 1020 at/cm3 for phosphorus and 1019 at/cm3 for boron; the annealing temperatures are 650°C for phosphorus and 900°C for boron. Transitors show good high frequency behaviour. A reduction of leakage currents and an increase of gains is noted passing from entirely implanted transistors to implanted base and diffused emitter transistors.

Keywords

Phosphorus Argon Boron Pyrolysis GaAs 

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References

  1. 1.
    Allen: Electronics Lett. 5, 111 (1969).CrossRefGoogle Scholar
  2. 2.
    Gibbons: Proc. I.E.E.E 56, 295 (1968).Google Scholar

Copyright information

© Springer-Verlag, Berlin · Heidelberg 1971

Authors and Affiliations

  • J L. Assémat
    • 1
  1. 1.Lignes Télégraphiques et Téléphoniques78 - Conflans-Ste-HonorineFrance

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