Application of Ion Implantation to N-P-N-Transistors
Transitors were made either entirely through ion implantation or by base ion implantation before, or after emitter diffusion. Multi-implantation process through a thin layer of SiO2 was used: 30, 54, 100 keV for phosphorus, and 16, 30, 55, 100 keV for boron; the doses used give a maximum doping of 5 · 1020 at/cm3 for phosphorus and 1019 at/cm3 for boron; the annealing temperatures are 650°C for phosphorus and 900°C for boron. Transitors show good high frequency behaviour. A reduction of leakage currents and an increase of gains is noted passing from entirely implanted transistors to implanted base and diffused emitter transistors.
KeywordsLeakage Current Average Characteristic Junction Depth Base Thickness Base Window
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