Abstract
Ion implantation is well adapted to the realization of discrete or integrated field effect transistors operating at high frequency (f ⩾ 1 GHz) having a small pinch off voltage (Vp ≂ 1 V), and eventually capable to operate solely by forward biasing the gate junction (0 ⩽ Vg ⩽ 0, 5 V).
We describe the structure and fabrication processes of ion implanted field effect transistors now under study in our Laboratory and present the results obtained to date.
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© 1971 Springer-Verlag, Berlin · Heidelberg
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Bobenrieth, A., Ngu Tung, P., Arnodo, C. (1971). Junction Field Effect Transistors Fabricated by Ion Implantation. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_46
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DOI: https://doi.org/10.1007/978-3-642-80660-5_46
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-80662-9
Online ISBN: 978-3-642-80660-5
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