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Recent Advances in Ion Implanted Junction-Device Technology

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Ion Implantation in Semiconductors

Abstract

Recent applications of ion implantation to the fabrication of silicon discrete and integrated circuits indicates that this process may be used successfully in each step involving doping of the silicon. Techniques have been developed to fabricate the diode array for PICTUREPHONE®; room temperature double implanted, high gain transistors, and buried layers for integrated circuits. The successful fabrication of these structures overcomes some previously considered limitations of the ion implantation process.

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References

  1. Dill, H. G.: Recent Advances in Ion-Implanted MOS Technology, this meeting.

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  2. Mac Rae, A. U.: Device Fabrication by Ion Implantation, Rad. Effects 7, 59 (1971).

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Authors and Affiliations

  1. Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey, 07974, USA

    A. U. Mac Rae

Authors
  1. A. U. Mac Rae
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Editor information

Ingolf Ruge (Professor an der Technischen Universität München)Jürgen Graul (Wissenschaftlicher Mitarbeiter am Institut für Technische Elektronik der Technischen Universität München)

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© 1971 Springer-Verlag, Berlin · Heidelberg

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Mac Rae, A.U. (1971). Recent Advances in Ion Implanted Junction-Device Technology. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_44

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  • DOI: https://doi.org/10.1007/978-3-642-80660-5_44

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-80662-9

  • Online ISBN: 978-3-642-80660-5

  • eBook Packages: Springer Book Archive

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