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Ion Implantation in Semiconductors pp 315–328Cite as

Recent Advances in Ion Implanted MOS Technology

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Abstract

This paper discusses the latest progress in ion implantation as applied to field effect devices. After a survey of the different devices and circuit applications, problems of implanting through a passivation layer and annealing are considered. The main part describes new device and circuit applications now in production or under development.

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References

  1. Dill, H.G., Bower, R.W., Toombs, T.N.: Rad. Effects 7, 45 (1971).

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Author information

Authors and Affiliations

  1. Hughes Aircraft Company, Newport Beach, California, 92663, USA

    H. G. Dill, T. N. Toombs & L. O. Bauer

Authors
  1. H. G. Dill
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  2. T. N. Toombs
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  3. L. O. Bauer
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Editor information

Ingolf Ruge (Professor an der Technischen Universität München)Jürgen Graul (Wissenschaftlicher Mitarbeiter am Institut für Technische Elektronik der Technischen Universität München)

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© 1971 Springer-Verlag, Berlin · Heidelberg

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Dill, H.G., Toombs, T.N., Bauer, L.O. (1971). Recent Advances in Ion Implanted MOS Technology. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_43

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  • DOI: https://doi.org/10.1007/978-3-642-80660-5_43

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-80662-9

  • Online ISBN: 978-3-642-80660-5

  • eBook Packages: Springer Book Archive

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