The Use of Ion-Induced X-Rays to Investigate the Concentration Distribution and Atom Location of Boron-Implanted Silicon

Abstract

This work describes how 40keV protons may be used to measure the concentration profiles of boron implanted into silicon. The protons are used to generate boron-K X-rays (~180 eV) which are shown to arise predominantly from within 350 Å below the silicon surface. In order to minimise the interfering effect of silicon-L X-rays (~100eV) which are generated simultaneously, a specially developed boron filter was incorporated into the X-ray detector. The samples investigated were implanted with boron at 100keV, 200keV and 300keV, to a dose of 5 • 10¹⁶ boron ions/cm². In a preliminary investigation of the lattice location of the implanted boron, results are presented which are consistent with the boron occupying sites along the <110> atomic rows.