New Aspects of Atom Location: Flux Peaking
The flux peaking effect is discussed qualitatively and the effects of various factors which tend to influence flux peaking are reviewed using the recent calculations of Van Vliet. Experimental results obtained using Yb implanted silicon, including recent unpublished data, are discussed. The need to measure the angular dependence of the reaction of channeled ions with the atoms studied in location experiments is emphasized, and a brief discussion of some of the effects of flux peaking on the interpretation of measurements of disorder in crystals is presented.
KeywordsHelium Ytterbium Eisen Channeling
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