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New Aspects of Atom Location: Flux Peaking

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Ion Implantation in Semiconductors

Abstract

The flux peaking effect is discussed qualitatively and the effects of various factors which tend to influence flux peaking are reviewed using the recent calculations of Van Vliet. Experimental results obtained using Yb implanted silicon, including recent unpublished data, are discussed. The need to measure the angular dependence of the reaction of channeled ions with the atoms studied in location experiments is emphasized, and a brief discussion of some of the effects of flux peaking on the interpretation of measurements of disorder in crystals is presented.

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References

  1. See for example Mayer, J.W., Eriksson, L., Davies, J.A.: Ion Implantation in Semiconductors, Academic Press, New York, 1970.

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  2. Andersen, J.U., Andreasen, O., Davies, J. A., Uggerhøj, E.: Had. Effects 7, 25 (1971).

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  3. Domeij, B., Fladda, I., Johansson, N.G.E.: Rad. Effects 6., 155 (1970).

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  4. Van Vliet, D.: Rad. Effects (to be published).

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  5. Lindhard, J.: Kgl. Danske Videnskab. Selskab, Mat.-Fys. Medd. 34, No 14 (1965).

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  6. Morgan, D.V., Van Vliet, D.: Can. J. Phys. 46, 503 (1968).

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  7. Eisen, F., Uggerhøj, E.: unpublished work.

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  8. Westmoreland, J.E., Mayer, J.W., Eisen, F.H., Welch, B.: Rad. Effects 6, 161 (1970).

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  9. Eisen, F.H., Welch, B.: Rad. Effects 7, 143 (1971).

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Author information

Authors and Affiliations

  1. Institute of Physics, University of Aarhus, 8000, Aarhus C, Denmark

    F. H. Eisen

  2. North American Rockwell Science Center, P.O. Box 1085, Thousand Oaks, California, 91360, USA

    F. H. Eisen

Authors
  1. F. H. Eisen
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Editor information

Ingolf Ruge (Professor an der Technischen Universität München)Jürgen Graul (Wissenschaftlicher Mitarbeiter am Institut für Technische Elektronik der Technischen Universität München)

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© 1971 Springer-Verlag, Berlin · Heidelberg

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Eisen, F.H. (1971). New Aspects of Atom Location: Flux Peaking. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_39

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  • DOI: https://doi.org/10.1007/978-3-642-80660-5_39

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-80662-9

  • Online ISBN: 978-3-642-80660-5

  • eBook Packages: Springer Book Archive

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