New Aspects of Atom Location: Flux Peaking

  • F. H. Eisen
Conference paper


The flux peaking effect is discussed qualitatively and the effects of various factors which tend to influence flux peaking are reviewed using the recent calculations of Van Vliet. Experimental results obtained using Yb implanted silicon, including recent unpublished data, are discussed. The need to measure the angular dependence of the reaction of channeled ions with the atoms studied in location experiments is emphasized, and a brief discussion of some of the effects of flux peaking on the interpretation of measurements of disorder in crystals is presented.


Helium Ytterbium Eisen Channeling 


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  1. 1.
    See for example Mayer, J.W., Eriksson, L., Davies, J.A.: Ion Implantation in Semiconductors, Academic Press, New York, 1970.Google Scholar
  2. 2.
    Andersen, J.U., Andreasen, O., Davies, J. A., Uggerhøj, E.: Had. Effects 7, 25 (1971).CrossRefGoogle Scholar
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    Domeij, B., Fladda, I., Johansson, N.G.E.: Rad. Effects 6., 155 (1970).CrossRefGoogle Scholar
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    Van Vliet, D.: Rad. Effects (to be published).Google Scholar
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    Lindhard, J.: Kgl. Danske Videnskab. Selskab, Mat.-Fys. Medd. 34, No 14 (1965).Google Scholar
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    Morgan, D.V., Van Vliet, D.: Can. J. Phys. 46, 503 (1968).CrossRefGoogle Scholar
  7. 7.
    Eisen, F., Uggerhøj, E.: unpublished work.Google Scholar
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    Westmoreland, J.E., Mayer, J.W., Eisen, F.H., Welch, B.: Rad. Effects 6, 161 (1970).CrossRefGoogle Scholar
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    Eisen, F.H., Welch, B.: Rad. Effects 7, 143 (1971).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag, Berlin · Heidelberg 1971

Authors and Affiliations

  • F. H. Eisen
    • 1
    • 2
  1. 1.Institute of PhysicsUniversity of AarhusAarhus CDenmark
  2. 2.North American Rockwell Science CenterThousand OaksUSA

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