Abstract
This is a review of MeV He ion backscattering and channeling effect measurements used to analyze surface layers on semiconductors. Backscattering techniques provide both mass and depth resolution, channeling effects provide structural information and a determination of lineshapes for analysis of amorphous layers on crystalline substrates. Examples are given for analysis of the composition of dielectric layers, diffusion through passivating layers on GaAs, low temperature migration of Si in metal films and alloying behavior of Au on GaAs.
Supported in Part by the Office of Naval Research and Air Force Cambridge Research Laboratories
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References
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Mayer, J.W., Mitchell, I.V., Nicolet, MA. (1971). Analysis of Contact Formation and Surface Layers on Semiconductors. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_38
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