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Ion Implantation in Semiconductors pp 235–240Cite as

Ion-Implantation of Nitrogen into n-Type Cadmium Sulfide

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Abstract

Ion-implantation of nitrogen into n-type CdS has been investigated with energy up to 200 keV at dose levels around 1015 cm-2. The measurements of current-voltage and capacitance-voltage characteristics of implanted diodes have given evidence for p-type layer formation. The photoelectric properties of the diodes have provided additional support to the type conversion. EPR measurements have been employed to clarify the nature of impurity and lattice defect centers produced by the ion-implantation.

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References

  1. Chernow, F., Eldridge, G., Ruse, G., Wahlin, L.: Appl. Phys. Letters 12, 339 (1968); also, Pro. Natl. Electron Conf., 1969, P. 820.

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  4. Shiraki, Y., Shimada, T., Komatsubara, K.F.: Symposium on Ion-Implantation in Semiconductors (Japanese), at The Institute of Physical and Chemical Research, Wako-Shi, Saitama, Japan, March 1970.

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  5. Sugimoto, H., Shiraki, Y., Komatsubara, K.F.: Appl. Phys. Letters 18, no 10, 461 (1971).

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Authors and Affiliations

  1. Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, Japan

    Y. Shiraki, T. Shimada & K. F. Komatsubara

Authors
  1. Y. Shiraki
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  2. T. Shimada
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  3. K. F. Komatsubara
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Editor information

Ingolf Ruge (Professor an der Technischen Universität München)Jürgen Graul (Wissenschaftlicher Mitarbeiter am Institut für Technische Elektronik der Technischen Universität München)

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© 1971 Springer-Verlag, Berlin · Heidelberg

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Shiraki, Y., Shimada, T., Komatsubara, K.F. (1971). Ion-Implantation of Nitrogen into n-Type Cadmium Sulfide. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_32

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  • DOI: https://doi.org/10.1007/978-3-642-80660-5_32

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-80662-9

  • Online ISBN: 978-3-642-80660-5

  • eBook Packages: Springer Book Archive

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