Inventory of Paramagnetic Defects in Ion-Implanted Silicon
The inventory of paramagnetic defects in silicon was measured as the lattice disorder was increased from the crystalline to the amorphous phase by ion implantation. Measurements were made on n-type silicon implanted with 160 keV oxygen ions ranging in fluence from 1010 to 2 • 1016 O+/cm2. The EPR spectra of the negative divacancy (Si-G7), the neutral phosphorus-vacancy (Si-G8), the neutral 1-vacancy-oxygen (Si-Sl), and a new defect (Si-S2), which could be the negative charge state of the 4-vacancy, have been observed. These results were obtained by implanting 160 keV O+ ions into silicon samples which had previously been implanted with 200 keV P31 and annealed to form a degenerate n-type layer in the implanted region.