Abstract
Thermal annealing of defects in single-crystal GaP after 300 keV Ne+ irradiation at about 110°K to a dose of 6 • 1013 ions/cm2 has been studied at 110–500 °K by use of 275keV <110>-channeled protons by measurement of back-scattering and gallium and phosphorus characteristic X-ray yields. The Ne+ dose was insufficient to produce any completely amorphous layer. Results indicate significant annealing at about 110°K, some further annealing at 200-350 °K and rapid annealing almost to completion in an annealing stage centred at 400 K. During both the neon irradiation and annealing, identical normalised gallium and phosphorus X-ray yields were observed. It was also found that irradiation of GaP at 103°K with 275 keV protons to doses of ~1016 H+/cm2 (unchanneled) caused significant lattice disorder.
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© 1971 Springer-Verlag, Berlin · Heidelberg
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Williams, T.G., Palmer, D.W. (1971). The Annealing Behaviour of Gallium Phosphide in the Region 110–500°K after 300 keV Neon Irradiation. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_28
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DOI: https://doi.org/10.1007/978-3-642-80660-5_28
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-80662-9
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