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Implantation of Zinc into GaAs at 1 MeV

  • P. N. Favennec
Conference paper

Abstract

We have performed zinc ions implantations at 1 MeV followed by suitable heat treatment to make p-type buried layers into n-type GaAs. This paper describes the results obtained on the GaAs samples implanted with 66Zn at LN2 temperature, 20°C and 300°C and for several doses. Sheet resistance measurements versus anneal temperatures, electrical profiles by Hall effect measurements and stripping techniques and I-V characteristics of implanted junctions are reported.

Keywords

Hall Effect Measurement Sheet Resistivity GaAs Sample Sheet Resistance Measurement Mobility Profile 
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Copyright information

© Springer-Verlag, Berlin · Heidelberg 1971

Authors and Affiliations

  • P. N. Favennec
    • 1
  1. 1.Department P.M.T.Centre National d’Etudes des Telecommunications22 - LannionFrance

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