Implantation of Zinc into GaAs at 1 MeV
We have performed zinc ions implantations at 1 MeV followed by suitable heat treatment to make p-type buried layers into n-type GaAs. This paper describes the results obtained on the GaAs samples implanted with 66Zn at LN2 temperature, 20°C and 300°C and for several doses. Sheet resistance measurements versus anneal temperatures, electrical profiles by Hall effect measurements and stripping techniques and I-V characteristics of implanted junctions are reported.
KeywordsHall Effect Measurement Sheet Resistivity GaAs Sample Sheet Resistance Measurement Mobility Profile
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