Additional Ion Bombardment of Well Annealed Silicon Crystals Implanted with Phosphorus and Arsenic
Silicon crystals with implanted layers of phosphorus and arsenic have been well annealed and subsequently bombarded with small additional doses of phosphorus or arsenic ions and the changes in the electrical behaviour studied. For both types of implanted ions there was a decrease in the number of carriers as a result of the additional bombardment. This decrease was associated with an increase in the carrier mobility for those specimens which had originally been implanted with a high dose of phosphorus ions, but with a decrease in the mobility for those which had been implanted with arsenic ions. Some of the specimens were isochronally annealed after the additional implantation.
KeywordsPhosphorus Atom Additional Dose Isochronal Annealing Annealing Behaviour Annealing Stage
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