Abstract
30keV phosphorus ions have been implanted in p-type silicon crystals at different temperatures. The difference in the annealing behaviour between an amorphous and a nonamorphous implant has been used for the definition of a critical dose for amorphization by studying the sheet resistivity as a function of the annealing temperature. The variation of this critical dose with the implantation temperature has been studied for a constant dose rate and the results have been compared with a model for the amorphization process proposed by Morehead and Crowder. The comparison showed that the temperature dependent volume change of the amorphous zones was proportional to exp(-U/kT) and that no particular shape of the zones was favoured.
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References
Mazey, D.J., Nelson, R.S., Barnes, R.S.: Phil. Mag. 17, 1145 (1968).
Parson, J.R.: Phil. Mag. 12, 1159 (1965).
Crowder, B.L., Title, R.S., Brodsky, M.H., Pettit, G.D.: App. Phys. Letters 16, 205 (1970).
Mayer, J.W., Eriksson, L., Picraux, S.T., Davies, J.A.: Can. J. Phys. 46, 663 (1968).
Gusev, V.M., Martynenko, Yu.V., Starinin, C.V.: Proc. Int. Conf. on Atomic Collision Phenomena in Solids, Sussex 1969, p. 162 (North-Holland 1970 ).
Nelson, R.S., Mazey, D.J.: Can. J. Phys. 46, 689 (1968).
Hart, R.R., Marsh, O.J.: App. Phys. Letters 14, 225 (1969).
Blamires, N.G., Matthews, M.B., Nelson, R.S.: Phys. Letters 27A, 178 (1968).
Davies, D.E.: App. Phys. Letters 14, 227 (1968).
Morehead, F.F., Crowder, B.L.: Radiation Effects 6, 27 (1970).
Andersson, A., Eklund, K.-H.: to be published.
Nelson, R.S.: Proc. European Conf. on Ion Implantation. Reading 1970, p. 212.
Shannon, J.M., Ford, R.A.: Radiation Effects 6, 217 (1970).
Sigmund, P., Sanders, J.B.: Proc. Int. Conf. of Ion Beams to Semiconductor Technology. P. Glotin ed. (editions Ophyrys, Grenoble) 215 (1967).
Crowder, B.L., Title, R.S.: Radiation Effects 6, 63 (1970).
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Eklund, K.H., Andersson, Å. (1971). Amorphization of Silicon Crystals Bombarded by 30 keV Phosphorus Ions at Different Temperatures. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_15
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DOI: https://doi.org/10.1007/978-3-642-80660-5_15
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