Abstract
A nearly flat donor profile is obtained between depths of 0.4 and 1.2 microns by channeling 300 keV phosphorus ions along the <111> axis of silicon. The correlations among the influence of misorientation of the crystal, scattering in a thin oxide layer on the surface of the crystal and scattering from the implantation damage on the channeled profile, have been studied and compared to calculations based on scattering from noncrystalline atoms.
The profiles are very reproducible. They are, however, very sensitive to surface effects such as a thin layer of SiO2 on the surface. If the aligned beam passes through 40 Å of SiO2 before entering the crystal, the donor density is reduced by 25% at 1.1 micron.
Concentrations approaching 1018 cm-3 can be obtained before the profile is substantially altered by the damage build-up.
Multiple scattering effects are proportional to E-1 and thus for lower energies they will become even more important. The energy effect is demonstrated with 100 keV profiles.
The temperature dependence of the annealing of the sheet resistance of the channeled implantations is essentially identical to that of random implantations, and is compared. The effective mobility obtained from the sheet conductivity after full anneal agrees well with published values.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
Moline, R.A.: Jour. of Appl. Phys. 42, 3553 (1971).
Dearnaley, G., Wilkins, M.A., Goode, P.D., Freeman, J.H., Gard, G.A.: Atomic Collision Phenomena in Solids, ed. D.W. Plamer, M.W. Thompson and P.D. Townsend, ( American Elsevier, N.Y. 1970 ) 633.
Goode, P.D., Wilkins, M.A., Dearnaley, G.: Rad. Effects 6, 237 (1970).
Lindhard, J.: Mat. Fys. Medd. Dan. Vid., Selsk. 34, no. 14 (1965).
Feldman, L.C., Appleton, B.R., Brown, W.L.: Proceedings of the International Conference on Solid State Physics Research With Accelerators, ed. A.N. Goland, BNL 50083 (C-52) 1967.
Moline, R.A.: Rev. of Sci. Inst. 41, 1255 (1970).
Moline, R.A.: Jour, of Appl. Phys. 42, 2471 (1971).
Kennedy, D.P., Murley, P.C., Kleinfelder, W.: IBM J. Res. Dev., Sept. 1968.
Kennedy, D.P., O’Brien, R.R.: IBM J. Res. Dev., March 1969.
Sze, S.M.: Physics of Semiconductor Devices, Wiley-Interscience, N.Y. 1969, 40.
Von Wijngaarden, A., Miremadi, B., Finney, N.M.A., Bradford, J.N.: Phys. Rev. 185, 490 (1969).
Archer, R.J.: Jour, of Electrochemical Soc. 104, 619 (1957).
Meyer, L.: Phys. Stat. Sol. (b) 44, 253 (1971).
Lindhard, J.: Atomic Collision Phenomena in Solids, ed. D.W. Palmer, M.W. Thompson and P.D. Townsend, ( American Elsevier, N.Y. 1970 ) 675.
Lindhard, J., Scharff, M., Schiott, H.E.: Mat. Fys. Medd. Dan. Vid. Selsk. 33, no. 14 (1963).
Reutlinger, G.W., Moline, R.A.: unpublished.
Davies, J.A., Denhartog, J., Erikson, L., Mayer, J.W.: Can. J. Phys. 45, 4053 (1967).
Feldman, L.C., Rodgers, J.W.: Jour. Appl. Phys. 41, 3776 (1970).
Author information
Authors and Affiliations
Editor information
Rights and permissions
Copyright information
© 1971 Springer-Verlag, Berlin · Heidelberg
About this paper
Cite this paper
Moline, R.A., Reutlinger, G.W. (1971). Phosphorus Channeled in Silicon: Profiles and Electrical Activity. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_10
Download citation
DOI: https://doi.org/10.1007/978-3-642-80660-5_10
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-80662-9
Online ISBN: 978-3-642-80660-5
eBook Packages: Springer Book Archive