Abstract
Luminescence in nanocrystalline forms of silicon has attracted a great deal of attention recently. A vast body of experimental data on the temperature dependence of luminescence decay time has accumulated in the past six years. We propose a simple model to discuss this vast body of data. The model posits a competition between an Arrhenius type radiative rate and a Berthelot type hopping escape rate. The model is transparent and analytic and we believe that it can explain related luminescence properties besides the decay rate.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
L.T.Canham, Appl. Phys. Lett. 57, 1046 (1990).
G. C. John and V. A. Singh, Phys. Reports 263, 93 (1995).
L.Pavesi and M.Ceschini, Phys. Rev. B 48, 17625 (1993).
L.Pavesi, M.Ceschini, and H.E.Roman, Thin Sol. Films 255, 67 (1995).
T.Suemoto, K.Tanaka, and A.Nakajima, Phys. Rev. B 49, 11005 (1994).
Y.Kanemitsu, Phys. Rev. B 53, 13515 (1996).
J.J.Mares, J.Kristofik, J.Pangrac, and A.Hospodkova, Appl. Phys. Lett. 63, 180 (1993).
D.Deresmes, V.Marissael, D.Stievenard, and C.Ortega, Thin Sol. Films 255, 258 (1995).
H.Berthelot, Ann. Chim. Phys. 66, 110 (1862).
G. C. John and V. A. Singh, Phys. Rev. B 54, 4416 (1996).
R.H.Tredgold, Proc. Phys. Soc. 80, 807 (1962).
C.M.Hurd, J. Phys. C. 18, 6487 (1985).
J.C.Vial et al., Phys. Rev. B 45, 14171 (1992).
G.Amato, Solid State Commun. 89, 213 (1994).
G.Amato, G. Francia, and P.Menna, Thin Sol. Films 255, 204 (1995).
Y.Kanemitsu, Phys. Reports 263, 1 (1995).
G.Mauckner et al., J. Appl. Phys. 75, 4167 (1994).
P.D.J.Calcott et al., J. Phys. Condensed Matter 5, L91 (1993).
G.W.’t Hooft, Y.A.R.R.Kessener, G.L.J.A.Rikken, and A.H.J.Venhuizen, Appl. Phys. Lett. 61, 2344 (1992).
T.Tsuboi, R.Laiho, and A.Pavlov, Thin Sol. Films 255, 216 (1995).
R.Laiho, A.Pavlov, O.Hovi, and T.Tsuboi, Appl. Phys. Lett. 63, 275 (1993).
V. A. Singh and G. C. John, in Proceedings of the Third International Conference on Semiconductor Materials and Technology, Delhi, edited by R.M.Mehra et al. (Transtech Publishers, Switzerland, Dec. 1996), to be published.
V. A. Singh and G. C. John, in Proceedings of the National Symposium on the Physics of Semiconductor Nanostructures, Delhi, edited by K.P.Jain et al. (Jan. 1997), to be published.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1998 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Singh, V.A., John, G.C. (1998). Carrier Dynamics in Porous and Nanocrystalline Silicon. In: Kumar, V., Sengupta, S., Raj, B. (eds) Frontiers in Materials Modelling and Design. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80478-6_26
Download citation
DOI: https://doi.org/10.1007/978-3-642-80478-6_26
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-80480-9
Online ISBN: 978-3-642-80478-6
eBook Packages: Springer Book Archive