Abstract
Electrical resistivity and positron lifetime measurements have been carried out as a function of temperature and germanium concentration in the FeSi1− x Ge x system. The lattice constant is seen to increase with Ge concentration. Electrical resistivity measurements as a function of temperature in the 4 K to 300 K temperature range show a semiconducting behaviour for all x. The gap value Δ decreases with increase in x. These results are discussed in conjunction with band structure calcula¬tions. Positron lifetime measurements show that, in FeSi, at temperatures below 200 K there is an unusual decrease in the positron lifetime, τ. With the help of lifetime calculations, the observed decrease is inferred to arise due to the delocalisation of the Fe d electron, an electronic structure change consequent to the Kondo singlet formation.
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Bharathi, A., Hariharan, Y., Mani, A., Sundar, C.S. (1998). Electrical Resistivity and Positron Lifetime Studies in the Kondo Insulating System, FeSi1−xGex . In: Kumar, V., Sengupta, S., Raj, B. (eds) Frontiers in Materials Modelling and Design. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80478-6_16
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DOI: https://doi.org/10.1007/978-3-642-80478-6_16
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