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Carrier Relaxation Dynamics in Strain-Induced InGaAs Quantum Dots

  • J. H. H. Sandmann
  • S. Grosse
  • G. von Plessen
  • J. Feldmann
  • H. Lipsanen
  • M. Sopanen
  • J. Tulkki
  • J. Ahopelto
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 62)

Abstract

We have performed time-resolved photoluminescence experiments on high-quality stressor-induced InGaAs quantum dots to study the carrier relaxation into and between individual quantum dot levels.

Keywords

Quantum Well Carrier Relaxation Quantum Well State Acoustic Phonon Scattering Signal Rise Time 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. [1]
    H. Lipsanen, M. Sopanen, and J. Ahopelto, Phys. Rev. B51, 13868 (1995).ADSGoogle Scholar
  2. [2]
    U. Bockelmann, Phys. Rev. B48, 17637 (1993).ADSGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1996

Authors and Affiliations

  • J. H. H. Sandmann
    • 1
  • S. Grosse
    • 1
  • G. von Plessen
    • 1
  • J. Feldmann
    • 1
  • H. Lipsanen
    • 2
  • M. Sopanen
    • 2
  • J. Tulkki
    • 2
  • J. Ahopelto
    • 3
  1. 1.Sektion PhysikLMUMünchenGermany
  2. 2.Optoelectronics LaboratoryHelsinki University of TechnologyEspooFinland
  3. 3.VTT ElectronicsEspooFinland

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