Carrier Relaxation Dynamics in Strain-Induced InGaAs Quantum Dots

  • J. H. H. Sandmann
  • S. Grosse
  • G. von Plessen
  • J. Feldmann
  • H. Lipsanen
  • M. Sopanen
  • J. Tulkki
  • J. Ahopelto
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 62)

Abstract

We have performed time-resolved photoluminescence experiments on high-quality stressor-induced InGaAs quantum dots to study the carrier relaxation into and between individual quantum dot levels.

Keywords

Recombination GaAs 

References

  1. [1]
    H. Lipsanen, M. Sopanen, and J. Ahopelto, Phys. Rev. B51, 13868 (1995).ADSGoogle Scholar
  2. [2]
    U. Bockelmann, Phys. Rev. B48, 17637 (1993).ADSGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1996

Authors and Affiliations

  • J. H. H. Sandmann
    • 1
  • S. Grosse
    • 1
  • G. von Plessen
    • 1
  • J. Feldmann
    • 1
  • H. Lipsanen
    • 2
  • M. Sopanen
    • 2
  • J. Tulkki
    • 2
  • J. Ahopelto
    • 3
  1. 1.Sektion PhysikLMUMünchenGermany
  2. 2.Optoelectronics LaboratoryHelsinki University of TechnologyEspooFinland
  3. 3.VTT ElectronicsEspooFinland

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