Spin Quantum Beats in Bulk and Low Dimensional Semiconductors
The electron Lande g factor is one of the basic parameters in semiconductors which describes the magnitude of the Zeeman splitting of electronic states in magnetic fields. Since various theoretical models predict the value of g, accurate measurements of g provide a sensitive test of different band structure calculations. A recently introduced experimental technique enables the measurement of the electron g factor g* with high accuracy by spin quantum beats.  The technique proves to be feasible to measure various effects as the anisotropy of g* in quantum wires, the dependence of g* on quantum well thickness, and the temperature dependence of g* in bulk GaAs up to room temperature. [4, 5] The temperature dependent spin quantum beat experiments show interesting discrepancies between experiment and a well accepted five-band k • p theory model.
KeywordsAnisotropy GaAs Sapphire