Abstract
Various possibilities which affect the mode of homoepitaxial growth of metals are outlined. Special attention is given to the potential energy surface of diffusing atoms and how it determines the growth kinetics, the island density, and the critical island size. In particular we discuss mechanisms how surfactants may work, with special attention to Sb on Ag(111). Using density functional theory calculations it is shown that antimony is a strongly surface segregating species, and that its stable geometry is at the substitutional surface site. In this geometry it acts repulsively on deposited Ag adatoms, giving rise to an increase of the Ag island density and to irregular island shapes. As a consequence, the growth changes from the multi-layer (at room temperature) to the layer-by-layer mode. The theoretical results are compared with recent experiments.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
G. Ehrlieh and F. G. Hudda, J. Chem. Phys. 44, 1039 (1966).
S. C. Wang and G. Ehrlieh, Phys. Rev. Lett. 71, 4174 (1993).
T. T. Tsong, Atom-Probe Field Ion Microscopy. Cambridge University Press, Cambridge 1990.
G. L. Kellog, Phys. Rev. Lett. 72, 1662 (1994).
K. Meinel, M. Klaua, and H. Bethge, phys. stat. sol. 110, 189 (1988);
J. Cryst. Growth 89, 447 (1988);
H. Bethge, in: Kinetics of Ordering and Growth at Surfaces, Ed. M. G. Lagally. Plenum Press, New York 1990, 125.
Y. W. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Phys. Rev. Lett. 66, 1998 (1991).
M. Horn-von Hoegen, to be published in Appl. Phys. A.
S. Esch, M. Hohage, T. Michely, and G. Comsa, Phys. Rev. Lett. 72, 518 (1994).
The step formation energy of metals is typically a fraction of the surface energy. For close-packed steps on Al (111) the calculations predict 0.24eV per step-edge atom (see Ref. 10). For 4c? transition metals see Ref. 11.
R. Stumpf and M. Scheffler, Phys. Rev. Lett. 72, 254 (1994);
submitted to Phys. Rev. B.
M. Scheffler, J. Neugebauer, and R. Stumpf, J. Phys.: Condens. Matter 5, A91 (1993).
S. Stoyanov and D. Kashchiev, in Current Topics in Materials Science, Ed. E. Kaldis. North-Holland, Amsterdam 1981, Vol. 7, 69.
J. Vrijmoeth, H. A. van der Vegt, J. A. Meyer, E. Vlieg, and R. J. Behm, to be published.
For Al (111) there is indeed an energy gradient superimposed to the atomic-structure corrugation, which gives rise to an attraction of about 0.15 eV between a position of the adatom just at the step and one far away (see Ref. 10). This attraction results not from the electrostatic fields of the adatom and step dipoles which is, in fact, slightly repulsive, but is mediated by adatom- and step-induced surface states.
Typically, coordination number models scale the energy of each atom with the square root of its local coordination. Often also a small linear term is added. The square root behavior takes the bond saturation into account which makes this approach very similar to the embedded-atom and effective-medium methods [see for example I. J. Robertson et al., Europhs. Lett. 15, 301 (1991), Phys. Rev. Lett. 70, 1944 (1993), and M. Methfessel et al., Appl. Phys. A 55, 442 (1992)]. All these methods are often labeled as “glue-type models”.
Glue-type models (see Ref. 15) give an energy barrier for self-diffusion of Al on Al (111) which is by more than a factor of ten higher than what is found in the DFT-LDA calculations. This might be an extrem case of the inaccuarcy of glue-type models, because for Al (111) the DFT-LDA barrier is particularly small (0.04 eV) due to the partly covalent nature of Al.
M. Bott, M. Hohage, T. Michely, and G. Comsa, Phys. Rev. Lett. 70, 1489 (1993).
J. Tersoff, A. W. Denier van der Gon, and R. M. Tromp, Phys. Rev. Lett. 72, 266 (1994).
S. Stoyanov and I. Markov, Surf. Sci. 116, 313 (1982).
J. A. Venables, G. D. T. Spiller, and M. Hanbucken, Rep. Prog. Phys. 47, 399 (1984).
G. S. Bales and D. C. Chrzan, Phys. Rev. B, in press (1994).
J. Villain, A. Pimpinelli, and D. E. Wolf, Comments Cond. Mat. Phys. 16, 1 (1992);
J. Villain, A. Pimpinelli, L. Tang, and D. E. Wolf, J. Physique I 2, 2107 (1992).
J. G. Amar, F. Family, and P.-M. Lam, in Mechanisms of Thin Film Evolution, Eds. S. M. Yalisove, C. V. Thompson, and D. J. Eaglesham, Materials Research Society, to be published.
M. C. Bartelt and J. W. Evans, Phys. Rev. B 46, 12675 (1992).
E. S. Hood, B. H. Toby, and W. H. Weinberg, Phys. Rev. Lett. 55, 2437 (1985).
R. Kunkel, B. Poelsema, L. K. Verheij, and G. Comsa, Phys. Rev. Lett. 65, 733 (1990);
M. Bott, T. Michely, and G. Comsa, Surf. Sci. 272, 161 (1992).
Island with dendritic shape have been observerd for Au and Ag(111) (see Ref. 5), for Au on Ru(1000) by R. Q. Hwang, J. Schroder, R. Günther, and R. J. Behm, Phys. Rev. Lett. 67, 3279 (1991), and for Pt (111) (see Ref. 26).
G. Rosenfeld, R. Servaty, C. Teichert, B. Poelsema, and G. Comsa, Phys. Rev. Lett. 71, 895 (1993).
W. F. Egelhoff, Jr. and D. A. Steigerwald, J. Vac. Sci. Technol. A7, 2167 (1989).
H. L. Gaigher, N. G. van der Berg, and J. B. Malherbe, Thin Solid Films 137, 337 (1986).
Z. Zhang and M. G. Lagaily, Phys. Rev. Lett. 72, 693 (1994).
H. Wolter, M. Schmidt, and K. Wandelt, Surf. Sci. 298, 173 (1993).
H. Wolter, M. Schmidt, M. Nohlen and K. Wandelt, this volume, p. 232
H. A. van der Vegt, H. M. van Pinxteren, M. Lohmeier, E. Vlieg, and J. M. C. Thornton, Phys. Rev. Lett. 68, 3335 (1992).
S. Oppo, V. Fiorentini, and M. Scheffler, Phys. Rev. Lett. 71, 2437 (1993).
S. Oppo, V. Fiorentini, and M. Scheffler, MRS Proc. 314, 111 (1994).
Y. Suzuki, H. Kikuchi, and N. Koshizuka, Jap. J. Appl. Phys. 27, L1175 (1988).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1996 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Scheffler, M., Fiorentini, V., Oppo, S. (1996). Homoepitaxial Growth of Metals and the Role of Surfactants. In: MacDonald, R.J., Taglauer, E.C., Wandelt, K.R. (eds) Surface Science. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80281-2_18
Download citation
DOI: https://doi.org/10.1007/978-3-642-80281-2_18
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-80283-6
Online ISBN: 978-3-642-80281-2
eBook Packages: Springer Book Archive