Material-Related Growth Characteristics in MBE

  • Marian A. Herman
  • Helmut Sitter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 7)

Abstract

Different materials exhibit usually different properties from the point of view of growth peculiarities [7.1]. The characteristic features which distinguish the materials are usually connected with a specific chemical element, e.g., Si, As, P, or Hg. The presence of this element in the material to be grown demands special technological precautions because of, for example, high evaporation temperature, high volatility, or extraordinary chemical reactivity. The special properties of the constituent elements also frequently bring about quite different growth mechanisms of the compounds crystallized with MBE.

Keywords

Recombination Ozone Boron Hull Hydride 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 7.1
    S. Mahajan, L.C. Kimerling (eds.): Concise Encyclopedia of Semiconducting Materials and Related Technologies (Pergamon, Oxfort 1992)Google Scholar
  2. 7.2
    S. Sharan, J. Narayan: Semiconductor heterostructures — Formation of defects and their reduction, in [Ref. 7.1, p. 414]Google Scholar
  3. 7.3
    Y. Ishikawa, N. Shibata: J. Cryst. Growth 150, 980 (1995)CrossRefGoogle Scholar
  4. 7.4
    J.C. Bean: J. Cryst. Growth 81, 411 (1987)CrossRefGoogle Scholar
  5. 7.5
    E. Kasper, J.C. Bean (eds.): Silicon Molecular Beam Epitaxy (CRC Press, Boca Raton 1988) E. Kasper, E.H.C. Parker (eds.): Silicon Molecular Beam epitaxy 1995, J. Cryst. Growth 157, nos. 1–4 (1995)Google Scholar
  6. 7.6
    K. Sakamoto, T. Sakamoto, S. Nagao, G. Hashiguchi, K. Kuniyoshi, Y. Bando: Jpn J. Appl. Phys. 26, 666 (1987)CrossRefGoogle Scholar
  7. 7.7
    T. Sakamoto: RHEED oscillations in MBE and their applications to precisely controlled crystal growth, in Proc. NATO Summer School on MBE, Ile de Bendor (1987)Google Scholar
  8. 7.8
    E. Kasper: Silicon germanium heterostructures on silicon substrates, Festkörperprobleme (Advances in Solid State Physics) 27, 265 (Vieweg, Braunschweig 1987) and J. Cryst. Growth 150, 921 (1995) E. Kasper (ed.): Properties of Strained and Relaxed Silicon Germanium (INSPEC, London 1995)Google Scholar
  9. 7.9
    H.J. Gossmann: Surf. Sci. 179, 453 (1987)CrossRefGoogle Scholar
  10. 7.10
    M. Zinke-Allmang, H.J. Gossmann, L.C. Feldman, G.J. Fisanick: In MRS Proc. 77, ed. by J.D. Dow, I.K. Schuwer (MRS, Pittsburgh 1987) p. 703 A. Wakahara, K.K. Vong, T. Hasegawa, A. Fujihara, A. Sasaki: J. Cryst. Growth 151, 52 (1995)Google Scholar
  11. 7.11
    R.F.G. Farrow: J. Vac. Sci. Technol. B 1, 222 (1983)CrossRefGoogle Scholar
  12. 7.12
    E. Kasper: Appl. Phys. A 28, 129 (1982) S. Keršulis, V. Mitin: Semicond. Sci. Technol. 10, 653 (1995)CrossRefGoogle Scholar
  13. 7.13
    J.C. Bean: J. Cryst. Growth 70, 444 (1984)CrossRefGoogle Scholar
  14. 7.14
    J.C. Bean, G.E. Becker, P.M. Petroff, T.E. Seidel: J. Appl. Phys. 48, 907 (1977)CrossRefGoogle Scholar
  15. 7.15
    R.C. Handerson: J. Electrochem. Soc. 119, 772 (1972)CrossRefGoogle Scholar
  16. 7.16
    G.E. Becker, J.C. Bean: J. Appl. Phys. 48, 3395 (1977)CrossRefGoogle Scholar
  17. 7.17
    Y. Ota: J. Electrochem. Soc. 124, 1795 (1977)CrossRefGoogle Scholar
  18. 7.18
    A. Ishizaka, K. Nakagawa, Y. Shiraki: In Proc. 2nd Int’l Symp. on MBE and Related Clean Surface Techniques (Japanese Soc. Appl. Phys., Tokyo 1982) p. 183Google Scholar
  19. 7.19
    Y.H. Xie, Y.Y. Wu, K.L. Wang: Appl. Phys. Lett. 48, 287 (1986)CrossRefGoogle Scholar
  20. 7.20
    E. Wirthl, H. Sitter, P. Bauer: J. Cryst. Growth 146, 404 (1995)CrossRefGoogle Scholar
  21. 7.21
    R. Hull, J.C. Bean, D.C. Joy, M.E. Twing: Appl. Phys. Lett. 49, 1714 (1986)CrossRefGoogle Scholar
  22. 7.22
    K. Kugimiya, Y. Shirafuji, N. Matsuo: Jpn. J. Appl. Phys. 24, 564 (1985)CrossRefGoogle Scholar
  23. 7.23
    T. Tatsumi, N. Aizak, H. Tsuya: Jpn. J. Appl. Phys. 24, 1227 (1985)CrossRefGoogle Scholar
  24. 7.24
    M. Tabe: Appl. Phys. Lett. 45, 1073 (1984)CrossRefGoogle Scholar
  25. 7.25
    T. Sakamoto, N.J. Kawai, T. Nakagawa, K. Ohta, T. Kojima: Appl. Phys. Lett. 47, 617 (1985)CrossRefGoogle Scholar
  26. 7.26
    T. Sakamoto, N.J. Kawai, T. Nakagawa, K. Ohta, T. Kojima, G. Hashiguchi: Surf. Sci. 174, 651 (1986)CrossRefGoogle Scholar
  27. 7.27
    T. Sakamoto, G. Hashiguchi: Jpn. J. Appl. Phys. 25, L78 (1986)CrossRefGoogle Scholar
  28. 7.28
    T. Sakamoto, T. Kawamura, S. Nago, G. Hashiguchi, K. Sakamoto, K. Kuniyoshi: J. Cryst. Growth 81, 59 (1987)CrossRefGoogle Scholar
  29. 7.29
    T. Sakamoto, K. Sakamoto, G. Hashiguchi, N. Takahashi, S. Nago, K. Kuniyoshi, K. Miki: In Proc. 2nd Int’l Symp. on Si-MBE, Honolulu (1987)Google Scholar
  30. 7.30
    V. Fuenzalida, I. Eisele: J. Cryst. Growth 74, 597 (1986)CrossRefGoogle Scholar
  31. 7.31
    A. Ishizaka, Y. Shiraki: J. Electrochem. Soc. 133, 666 (1986)CrossRefGoogle Scholar
  32. 7.32
    R. Kaplan: Surf. Sci. 93, 145 (1980)CrossRefGoogle Scholar
  33. 7.33
    N. Aizaki, T. Tatsumi: Surf. Sci. 174, 658 (1986)CrossRefGoogle Scholar
  34. 7.34
    T. Sakamoto, T. Kawamura, G. Hashiguchi: App. Phys. Lett. 48, 1612 (1986)CrossRefGoogle Scholar
  35. 7.35
    T. Kawamura, P.A. Maksym: Surf. Sci. 161, 12 (1985)CrossRefGoogle Scholar
  36. 7.36
    T. Kawamura, T. Sakamoto, K. Ohta: Surf. Sci. 171, L409 (1986)CrossRefGoogle Scholar
  37. 7.37
    T. Kawamura, T. Natori, T. Sakamoto, P.A. Maksym: Surf. Sci. 181, L171 (1987)CrossRefGoogle Scholar
  38. 7.38
    H.J. Gossmann, L.C. Feldman: Phys. Rev. B 32, 6 (1985)CrossRefGoogle Scholar
  39. 7.39
    H.J. Gossmann, L.C. Feldman: J. Vac. Sci. Technol. B 3, 1065 (1985)CrossRefGoogle Scholar
  40. 7.40
    H.J. Gossmann, L.C. Feldman: Appl. Phys. A 38, 171 (1985)CrossRefGoogle Scholar
  41. 7.41
    S.M. Mokier, W.K. Liu, N. Ohtani, B.A. Joyce: Appl. Phys. Lett. 59, 3419 (1991)CrossRefGoogle Scholar
  42. 7.42
    W.K. Liu, S.M. Mokier, N. Ohtani, C. Roberts, B.A. Joyce: Surf. Sci. 264, 301 (1992)CrossRefGoogle Scholar
  43. 7.43
    W.K. Liu, S.M. Mokier, N. Ohtani, J. Zhang, B.A. Joyce: Appl. Phys. Lett. 60, 56 (1992)CrossRefGoogle Scholar
  44. 7.44
    W.K. Liu, S.M. Mokier, N. Ohtani, J. Zhang, B.A. Joyce: J. Appl. Phys. 71, 5166 (1992)Google Scholar
  45. 7.45
    M. Hansen: Constitution of Binary Alloys, 2nd edn. (McGraw-Hill, New York 1958) p. 1268Google Scholar
  46. 7.46
    M.H. Grabow, G.H. Gilmer: Surf. Sci. 194, 333 (1988)CrossRefGoogle Scholar
  47. 7.47
    H.J. Gossmann, L.C. Feldman, W.M. Gibson: Surf. Sci. 155, 413 (1985)CrossRefGoogle Scholar
  48. 7.48
    P. Chen, D. Bolmont, C.A. Sebenne: Thin Solid Films 111, 367 (1984) H. Sunamura, N. Usami, Y. Shiraki, S. Fukatsu: Appl. Phys. Lett. 66, 3024 (1995)CrossRefGoogle Scholar
  49. 7.49
    T. Narusawa, W.M. Gibson: Phys. Rev. Lett. 47, 1459 (1981)CrossRefGoogle Scholar
  50. 7.50
    G.O. Krause: Phys. Status Solidi (a) 3, 907 (1970)CrossRefGoogle Scholar
  51. 7.51
    A.G. Cullis, G.R. Booker: J. Cryst. Growth 9, 132 (1971)CrossRefGoogle Scholar
  52. 7.52
    L.N. Aleksandrov, R.N. Lovyagin, O.P. Pchelyakov, S.I. Stenin: J. Cryst. Growth 24/25, 289 (1974)CrossRefGoogle Scholar
  53. 7.53
    G.L. McVay, A.R. Ducharme: J. Appl. Phys. 44, 1409 (1973)CrossRefGoogle Scholar
  54. 7.54
    L.C. Feldman, J. Bevk, B.A. Davidson, H.J. Gossmann, J.P. Mannaerts: Phys. Rev. Lett. 59, 664 (1987)CrossRefGoogle Scholar
  55. 7.55
    H.J. Gossmann, J.C. Bean, L.C. Feldman, E.G. McRae, I.K. Robinson: Phys. Rev. Lett. 55, 1106 (1985)CrossRefGoogle Scholar
  56. 7.56
    H.J. Gossmann, J.C. Bean, L.C. Feldman, E.G. McRae, I.K. Robinson: J. Vac. Sci. Technol. A 3, 1633 (1985)CrossRefGoogle Scholar
  57. 7.57
    M.A. Lamin, O.P. Pchelyakov, L.V. Sokolov, S.I. Stenin, A.I. Toropov: Surf. Sci. 207, 418 (1989)CrossRefGoogle Scholar
  58. 7.58
    S.M. Pintus, S.I. Stenin, A.I. Toropov, E.M. Trukhanov, V.Yu. Karasyov: Thin Solid Films 151, 275 (1987)CrossRefGoogle Scholar
  59. 7.59
    P. Sheldon, B.G. Yacobi, S.E. Asher, K.M. Jones, M.J. Hafich, G.Y. Robinson: J. Vac. Sci. Technol. 4, 889 (1986)CrossRefGoogle Scholar
  60. 7.60
    S.M. Mokier, N. Ohtani, M.H. Xie, X. Zhang, B.A. Joyce: J. Cryst. Growth 127, 467 (1993) H. Akazawa: Surf. Sci. 323, 269 (1995)CrossRefGoogle Scholar
  61. 7.61
    M. Zinke-Allmang, H.J. Gossmann, L.C. Feldman, G.J. Fisanick: J. Vac. Sci. Technol. A 5, 2030 (1987)CrossRefGoogle Scholar
  62. 7.62
    H. J. Gossmann, L.C. Feldman: Appl. Phys. Lett. 48, 1141 (1986)CrossRefGoogle Scholar
  63. 7.63
    J.C. Bean, L.C. Feldman, A.T. Fiory, S. Nakahara, I.K. Robinson: J. Vac. Sci. Technol. A 2, 436 (1984) W.X. Ni, W.M. Chen, I.A. Buyanova, A. Henry, G.V. Hansson, B. Monemar: J. Cryst. Growth 157, 242 (1995)CrossRefGoogle Scholar
  64. 7.64
    H. Jorke, H.J. Herzog. J. Electrochem. Soc. 133, 998 (1986) A. Matsumura, J.M. Fernandez, T.J. Thornton, R.S. Prasad, S.N. Holmes, X.M. Zhang, M.H. Xie, J. Zhang, B.A. Joyce: Semicond. Sci. Technol. 10, 1247 (1995)CrossRefGoogle Scholar
  65. 7.65
    R. People, J.C. Bean, V.D. Lang: J. Vac. Sci. Technol. A 3, 846 (1985)CrossRefGoogle Scholar
  66. 7.66
    H. Daembkes, H.J. Herzog, J. Jorke, H. Kibbel, E. Kasper: IEEE Trans. ED-33, 633 (1986)Google Scholar
  67. 7.67
    T.P. Pearsall, J.C. Bean: IEEE Trans. EDL-7, 308 (1986)Google Scholar
  68. 7.68
    A.I. Yakimov, V.A. Markov, A.V. Dvurechenskii, O.P. Pchelakov: Phil. Mag. B 65, 701 (1992)CrossRefGoogle Scholar
  69. 7.69
    A. Nishida, K. Nakagawa, E. Murakami, M. Miyao: J. Appl. Phys. 71, 5913 (1992)CrossRefGoogle Scholar
  70. 7.70
    E. Kasper, H.J. Herzog, H. Jorke, G. Abstreiter: Superlattices and Microstructures 3, 141 (1987) H. Wado, T. Shimizu, M. Ishida, T. Nakamura: J. Crystal Growth 147, 320 (1995) H. Chen, L.W. Guo, Q. Cui, Q. Hu, Q. Huang, J.M. Zhou: J. Appl. Phys. 79, 1167 (1996) S.W. Park, J.Y. Shim, H.K. Baik: J. Appl. Phys. 78, 5993 (1995)CrossRefGoogle Scholar
  71. 7.71
    J.H. Van der Merwe: J. Appl. Phys. 34, 123 (1962)CrossRefGoogle Scholar
  72. 7.72
    J.W. Matthews, A.E. Blakeslee: J. Cryst. Growth 27, 118 (1974)Google Scholar
  73. 7.73
    R. People, J.C. Bean: Appl., Phys. Lett. 47, 322 (1986) [Erratum: ibid. 49, 229 (1986)CrossRefGoogle Scholar
  74. 7.74
    J.C. Bean: J. Vac. Sci. Technol. B 4, 1427 (1986)CrossRefGoogle Scholar
  75. 7.75
    S. Luryi, T. Pearsall, H. Temkin, J.C. Bean: IEEE Trans. EDL-7, 104 (1986) C. Renard, S. Bodnar, P.A. Badoz, I. Sagnes: J. Cryst. Growth 157, 195 (1995)Google Scholar
  76. 7.76
    H. Temkin, T.P. Pearsall, J.C. Bean, R.A. Logan, S. Luryi: Appl. Phys. Lett. 48, 963 (1986)CrossRefGoogle Scholar
  77. 7.77
    T.P. Pearsall, H. Temkin, J.C. Bean, S. Luryi: IEEE Trans. EDL-7, 330 (1986)Google Scholar
  78. 7.78
    J.F. Luy, E. Kasper, W. Behr: In Proc. 17th Europ. Microwave Conf., Rome (1987) p. 820Google Scholar
  79. 7.79
    J.F. Luiy, A. Casel, W. Behr, E. Kasper: IEEE Trans. ED-34, 1084 (1987) A. Schuppen, H. Dietrich: J. Cryst. Growth 157, 207 (1995) K.D. Hobart, F.J. Kub, N.A. Papanicolau, W. Kruppa, P.E. Thompson: J. Cryst. Growth 157, 215 (1995)Google Scholar
  80. 7.80
    J.F. Luy, H. Kibbel, E. Kasper: Int’l J. Infrared and Millimeter Waves 7, 305 (1986)CrossRefGoogle Scholar
  81. 7.81
    J. Buechler, E. Kasper, P. Russer, K.M. Strohm: IEEE Trans. MTT-34, 1516 (1986)Google Scholar
  82. 7.82
    H. Daembkes: In Proc. 2nd Int’l Symp. on Si-MBE, Honolulu (1987)Google Scholar
  83. 7.83
    E. Kasper, H.J. Herzog, K. Womer: J. Cryst. Growth 81, 458 (1987)CrossRefGoogle Scholar
  84. 7.84
    R. People, J.C. Bean, D.V. Lang, A.M. Sergent, H.L. Störnier, K.W. Wecht, R.L. Lynch, K. Baldwin: Appl. Phys. Lett. 45, 1231 (1984)CrossRefGoogle Scholar
  85. 7.85
    G. Abstreiter, H. Brugger, T. Wolff, H. Jorke, H.J. Herzog: Phys. Rev. Lett. 54, 2441 (1985)CrossRefGoogle Scholar
  86. 7.86
    H.L. Störnier: Surf. Sci. 132, 519 (1983)CrossRefGoogle Scholar
  87. 7.87
    R. People, J.C. Bean: Appl. Phys. Lett. 48, 538 (1986)CrossRefGoogle Scholar
  88. 7.88
    J.C. Bean, E.A. Sadowsky: J. Vac. Sci. Technol. 20, 137 (1982)CrossRefGoogle Scholar
  89. 7.89
    E. Kasper, H.J. Herzog, H. Daembkes, G. Abstreiter: MRS Proc. 56, 347 (1987)CrossRefGoogle Scholar
  90. 7.90
    E. Kasper, H.J. Herzog, H. Daembkes, T. Ricker: Growth mode and interface structure of MBE grown GexSi1-x/Si structures, in Two-Dimensional Systems: Physics and New Devices, ed. by G. Bauer, F. Kuchar, H. Heinrich, Springer Ser. Solid-State Sci., Vol. 53 (Springer, Berlin, Heidelberg 1984)Google Scholar
  91. 7.91
    H.H. Farrell, J.P. Harbison, L.D. Peterson: J. Vac. Sci. Technol. B 5, 1482 (1987)CrossRefGoogle Scholar
  92. 7.92
    A.Y. Cho: Recent advances in GaAs on Si. Int’l Electron Device Meeting, Washington DC (1987)Google Scholar
  93. 7.93
    H. Noge, H. Kano, T. Kato, M. Hashimoto, I. Igarashi: J. Cryst. Growth 83, 431 (1987)CrossRefGoogle Scholar
  94. 7.94
    P.K. Larsen, J.H. Neave, J.F. Van der Veen, P.J. Dobson, B.A. Joyce: Phys. Rev. B 27, 4966 (1983)CrossRefGoogle Scholar
  95. 7.95
    P.J. Dobson, J.H. Neave, B.A. Joyce: Surf. Sci. 119, L339 (1982)CrossRefGoogle Scholar
  96. 7.96
    F. Briones, D. Golmayo, L. Gonzales, J.L. De Miguel: Jpn. J. Appl. Phys. 24, L478 (1985)CrossRefGoogle Scholar
  97. 7.97
    P.K. Larsen, D.J. Chadi: Phys. Rev. B 37, 8282 (1988)CrossRefGoogle Scholar
  98. 7.98
    J.H. Neave, P.J. Dobson, B.A. Joyce, J. Zhang: Appl. Phys. Lett. 47, 100 (1985)CrossRefGoogle Scholar
  99. 7.99
    T. Shitara, J. Zhang, J.H. Neave, B.A. Joyce: J. Appl. Phys. 71, 4299 (1992)CrossRefGoogle Scholar
  100. 7.100
    A. Poudoulec, B. Guenais, C. D’Anterroches, P. Auvray, M. Baudet, A. Regreny: Appl. Phys. Lett. 60, 2406 (1992)CrossRefGoogle Scholar
  101. 7.101
    K. Ploog: Annu. Rev. Mater. Sci. 11, 171 (1981)CrossRefGoogle Scholar
  102. 7.102
    A.Y. Cho: Thin Solid Films 100, 291 (1983)CrossRefGoogle Scholar
  103. 7.103
    D.E. Mars, J.N. Miller: J. Vac. Sci. Technol. B 4, 571 (1986)CrossRefGoogle Scholar
  104. 7.104
    J. Massies, J.P. Contour: J. Appl. Phys. 58, 806 (1985)CrossRefGoogle Scholar
  105. 7.105
    H. Fronius, A. Fischer, K. Ploog: Jpn. J. Appl. Phys. 25, L137 (1986)CrossRefGoogle Scholar
  106. 7.106
    K. Ploog, A. Fischer: Appl. Phys. Lett. 48, 1392 (1986)CrossRefGoogle Scholar
  107. 7.107
    K. Fujiwara, Y. Nishikawa, Y. Tokuda, T. Nakayama: Appl. Phys. Lett. 48, 701 (1986)CrossRefGoogle Scholar
  108. 7.108
    W.T. Tsang: Appl. Phys. Lett. 46, 1086 (1985)CrossRefGoogle Scholar
  109. 7.109
    N. Watanabe, T. Fukunaga, K.L.I. Kobayashi, H. Hakashima: Jpn. J. Appl. Phys. 24, L498 (1985)CrossRefGoogle Scholar
  110. 7.110
    M. Bafleur, A. Munoz-Yaque, A. Rocher: J. Cryst. Growth 59, 531 (1982)CrossRefGoogle Scholar
  111. 7.111
    Y. Suzuki, M. Seki, Y. Horikoshi, H. Okamoto: Jpn. J. Appl. Phys. 23, 164 (1984)CrossRefGoogle Scholar
  112. 7.112
    S.L. Weng, C. Webb, Y.G. Chai, S.G. Bandy: Appl. Phys. Lett. 47, 391 (1985)CrossRefGoogle Scholar
  113. 7.113
    G.M. Metze, A.R. Calawa, J.G. Mavroides: J. Vac. Sci. Technol. B 1, 166 (1983)CrossRefGoogle Scholar
  114. 7.114
    H. Fronius, A. Fischer, K. Ploog: J. Cryst. Growth 81, 169 (1987)CrossRefGoogle Scholar
  115. 7.115
    H.J. Gossmann, F.W. Sinden, L.C. Feldman: J. Appl. Phys. 67, 745 (1990)CrossRefGoogle Scholar
  116. 7.116
    A. Madhukar, S.V. Ghaisas: CRC Grit. Rev. Solid State Mater. Sci. 14, 1 (1988)CrossRefGoogle Scholar
  117. 7.117
    D.J. Frankel, C. Yu, J.P. Harbison, H.H. Farrell: J. Vac. Sci. Technol. B 5, 1113 (1987)CrossRefGoogle Scholar
  118. 7.118
    D.J. Chadi: J. Vac. Sci. Technol. A 5, 834 (1987)CrossRefGoogle Scholar
  119. 7.119
    M. Tanaka, H. Sakaki: J. Cryst. Growth 81, 153 (1987)CrossRefGoogle Scholar
  120. 7.120
    W.T. Tsang, R.C. Miller: Appl. Phys. Lett. 48, 1288 (1986)CrossRefGoogle Scholar
  121. 7.121
    C.W. Tu, R.C. Miller, B.A. Wilson, P.M. Petroff, T.D. Harris, R.F. Kopf, S.K. Sputz, M.G. Lamont: J. Cryst. Growth 81, 159 (1987)CrossRefGoogle Scholar
  122. 7.122
    T. Hayakawa, T. Suyama, K. Takahashi, M. Kondo, S. Yamamoto, S. Yano, T. Hijikata: Surf. Sci. 174, 76 (1986)CrossRefGoogle Scholar
  123. 7.123
    M. Tanaka, H. Sakaki, J. Yoshimo, T. Furuta: Surf. Sci. 174, 65 (1986)CrossRefGoogle Scholar
  124. 7.124
    H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka, T. Matsusue: Appl. Phys. Lett. 51, 1934 (1987)CrossRefGoogle Scholar
  125. 7.125
    J. Singh, K.K. Bajaj: J. Appl. Phys. 57, 5433 (1985)CrossRefGoogle Scholar
  126. 7.126
    D. Bimberg, D. Mars, J.N. Miller, R. Bauer, D. Oertel, J. Christen: Super-lattices and Microstructures 3, 79 (1987)CrossRefGoogle Scholar
  127. 7.127
    J.Y. Kim, P. Chen, F. Voillot, A. Madhukar: Appl. Phys. Lett 50, 739 (1987)CrossRefGoogle Scholar
  128. 7.128
    F. Voillot, J.Y. Kim, W.C. Tang, A. Madhukar, P. Chen: Superlattices and Microstructures 3, 313 (1987)CrossRefGoogle Scholar
  129. 7.129
    S.B. Ogale, A. Madhukar, F. Voillot, M. Thomsen, W.C. Tang, TC. Lee, J.Y. Kim, P. Chen: Phys. Rev. B 36, 1662 (1987)CrossRefGoogle Scholar
  130. 7.130
    M.A. Herman, D. Bimberg, J. Christen: J. Appl. Phys. 70, R1 (1991)CrossRefGoogle Scholar
  131. 7.131
    J. Singh, K.K. Bajaj, S. Chaudhari: Appl. Phys. Lett. 44, 805 (1984)CrossRefGoogle Scholar
  132. 7.132
    J. Singh, K.K. Bajaj: Appl. Phys. Lett. 44, 1075 (1984)CrossRefGoogle Scholar
  133. 7.133
    H. Sakaki, M. Tanaka, J. Yoshino: Jpn. J. Appl. Phys. 24, L417 (1985)CrossRefGoogle Scholar
  134. 7.134
    M. Tanaka, H. Sakaki, J. Yoshino: Jpn. J. Appl. Phys. 25, L155 (1986)CrossRefGoogle Scholar
  135. 7.135
    J.C.C. Fan, J.M. Poate (eds.): Heteroepitaxy on Silicon, MRS Proc, 67 (MRS, Pittsburgh 1986)Google Scholar
  136. 7.136
    R.D. Bringans, M.A. Olmstead, R.I.G. Uhrberg, R.Z. Bachrach: Appl. Phys. Lett. 51, 523 (1987)CrossRefGoogle Scholar
  137. 7.137
    R. Hull, A. Fischer-Colbrie, S.J. Rosner, S.M. Koch, J.S. Harris, Jr.: Appl. Phys. Lett. 51, 1723 (1987)CrossRefGoogle Scholar
  138. 7.138
    T. Won, G. Munns, M.S. Unlu, J. Chyi, H. Morkoç: J. Appl. Phys. 62, 3860 (1987) M. Tamura, T. Yodo: J. Cryst. Growth 147, 274 (1995) T. Yodo, M. Tamura: J. Cryst. Growth 154, 85 (1995) W. Y. Uen, T. Ohori, T. Nishinaga: J. Cryst. Growth 156, 133 (1995)CrossRefGoogle Scholar
  139. 7.139
    H. Kroemer: J. Cryst. Growth 81, 193 (1987)CrossRefGoogle Scholar
  140. 7.140
    P.N. Uppal, H. Kroemer: J. Appl. Phys. 58, 2195 (1985)CrossRefGoogle Scholar
  141. 7.141
    R.J. Fischer, N.C. Chang, W.F. Kopp, H. Morkoç, L.P. Erickson, R. Youngman: Appl. Phys. Lett. 47, 397 (1985)CrossRefGoogle Scholar
  142. 7.142
    R.J. Fischer, C.K. Peng, J. Klem, T. Henderson, H. Morkoç: Solid-State Electron. 29, 269 (1986)CrossRefGoogle Scholar
  143. 7.143
    W.A. Harrison, E.A. Kraut, J.R. Waldrop, R.W. Grant: Phys. Rev. B 18, 4402 (1978)CrossRefGoogle Scholar
  144. 7.144
    D.A. Neumann, H. Zabel, R.J. Fischer, H. Morkoç: J. Appl. Phys. 61, 1023 (1987)CrossRefGoogle Scholar
  145. 7.145
    D.K. Biegelsen, F.A. Ponce, A.J. Smith, J.C. Tramontana: J. Appl. Phys. 61, 1856 (1987)CrossRefGoogle Scholar
  146. 7.146
    S.M. Koch, S.J. Rosner, R. Hull, G.W. Yoffe, J.S. Harris, Jr.: J. Cryst. Growth 81, 205 (1987)CrossRefGoogle Scholar
  147. 7.147
    H.L. Tsai, J.W. Lee: Appl. Phys. Lett. 51, 130 (1987)CrossRefGoogle Scholar
  148. 7.148
    R.M. Lum, J.K. Klingert, B.A. Davidson, M.G. Lamont: Appl. Phys. Lett. 51, 36 (1987)CrossRefGoogle Scholar
  149. 7.149
    N. Chand, R. People, F.A. Baicchi, K.W. Wecht, A.Y. Cho: Appl. Phys. Lett. 49, 815 (1986)CrossRefGoogle Scholar
  150. 7.150
    N. Chand, R. Fischer, A.M. Sergent, D.V. Lang, S.J. Pearton, A.Y. Cho: Appl. Phys. Lett. 51, 1013 (1987)CrossRefGoogle Scholar
  151. 7.151
    M. Kawabe, T. Ueda, H. Takasugi: Jpn. J. Appl. Phys. 26, L114 (1987)CrossRefGoogle Scholar
  152. 7.152
    H. Takasugi, M. Kawabe, Y. Bando: Jpn. J. Appl. Phys. 26, L584 (1987)CrossRefGoogle Scholar
  153. 7.153
    M. Kawabe, T. Ueda: Jpn. J. Appl. Phys. 26, L944 (1987)CrossRefGoogle Scholar
  154. 7.154
    M. Zinke-Allmang, L.C. Feldman, S. Nakahara: Appl. Phys. Lett. 52, 144 (1988)CrossRefGoogle Scholar
  155. 7.155
    K. Ploog, G. Weimann (eds.) Molecular Beam Epitaxy 1992. J. Cryst. Growth 127, nos. 1–4 (1993) Sect. 1 and S. Hiyamizu, Y. Shiraki, S. Gonda (eds.) Molecular Beam Epitaxy 1994. J. Cryst. Growth 150, nos. 1–4 (1995)Google Scholar
  156. 7.156
    B. Goodhue, Z. Wasilewski (eds.): 12th North Am. Conf. on MBE. J. Vac. Sci. Technol. B 11, pp. 919–984 (1993)Google Scholar
  157. 7.157
    M.R. Melloch (Guest ed.): 13th North Ame. Conf. on MBE. J. Vac. Sci. Technol. B 12, pp. 1239–1311 (1994)Google Scholar
  158. 7.158
    K. Ploog: J. Cryst. Growth 79, 887 (1986)CrossRefGoogle Scholar
  159. 7.159
    W.T. Tsang, R.C. Miller: J. Cryst. Growth 77, 55 (1986)CrossRefGoogle Scholar
  160. 7.160
    D. Fritzsche: Solid-State Electron. 30, 1183 (1987)CrossRefGoogle Scholar
  161. 7.161
    D.L. Miller, P.M. Asbeck: J. Cryst. Growth 81, 368 (1987)CrossRefGoogle Scholar
  162. 7.162
    F. Alexandre, J.C. Harmand, J.L. Lievin, C. Dubon-Chevalier, D. Ankri, C. Minot, J.F. Palmier: J. Cryst. Growth 81, 391 (1987)CrossRefGoogle Scholar
  163. 7.163
    T. Hayakawa, T. Suyama, K. Takahashi, M. Kondo, S. Yamamoto, T. Hijikata: Appl. Phys. Lett. 52, 339 (1988)CrossRefGoogle Scholar
  164. 7.164
    T. Hayakawa, T. Suyama, K. Takahashi, M. Kondo, S. Yamamoto, T. Hijikata: Appl. Phys. Lett. 51, 707 (1987)CrossRefGoogle Scholar
  165. 7.165
    T. Hayakawa, K. Takahashi, T. Suyama, M. Kondo, S. Yamamoto, T. Hijikata: Appl. Phys. Lett. 52, 252 (1988)CrossRefGoogle Scholar
  166. 7.166
    H.Z. Chen, A. Ghaffari, H. Wang, H. Morcoc, A. Yariv: Appl. Phys. Lett. 51, 1320 (1987)CrossRefGoogle Scholar
  167. 7.167
    T. Yuasa, M. Mannoh, T. Yamada, S. Naritsuka, K. Shinozaki, M. Ishii: J. Appl. Phys. 62, 764 (1987)CrossRefGoogle Scholar
  168. 7.168
    W.J. Grande, C.L. Tang: Appl. Phys. Lett. 51, 1780 (1987)CrossRefGoogle Scholar
  169. 7.169
    J.M. Gaines, P.M. Petroff, H. Kroemer, R.J. Smes, R.S. Geels, J.H. English: J. Vac. Sci. Technol. B 6, 1378 (1988)CrossRefGoogle Scholar
  170. 7.170
    M. Tsuchiya, P.M. Petroff, L.A. Coldren: Appl. Phys. Lett. 54, 1690 (1989)CrossRefGoogle Scholar
  171. 7.171
    M.S. Miller, C.E. Pryor, H. Weman, L.A. Samoska, H. Kroemer, P.M. Petroff: J. Cryst. Growth 111, 323 (1991)CrossRefGoogle Scholar
  172. 7.172
    P.M. Petroff, M.S. Miller, Y.T. Lu, S.A. Chalmers, H. Metin, H. Kroemer, A.C. Gossard: J. Cryst. Growth 111, 360 (1991)CrossRefGoogle Scholar
  173. 7.173
    K.C. Wong. M. Krishnamurthy, B. Brar, J.C. Yi, H. Kroemer, J.H. English: Appl. Phys. Lett. 63, 1211 (1993)CrossRefGoogle Scholar
  174. 7.174
    J.C. Yi, N. Dagli: Appl. Phys. Lett. 61, 219 (1992)CrossRefGoogle Scholar
  175. 7.175
    M. Krishnamurthy, M.S. Miller, S.M. Petroff: Appl. Phys. Lett. 61, 2990 (1992)CrossRefGoogle Scholar
  176. 7.176
    S.Y. Hu, M.S. Miller, D.B. Young, J.C. Yi, D. Leonard, A.C. Gossard, P.M. Petroff, L.A. Coldren, N. Dagli: Appl. Phys. Lett. 63, 2015 (1993)CrossRefGoogle Scholar
  177. 7.177
    C. Amano, H. Sugiura, A. Yamamoto, M. Yamaguchi: Appl. Phys. Lett. 51, 1998 (1987)CrossRefGoogle Scholar
  178. 7.178
    C. Amano, H. Sugiura, K. Ando, M. Yamaguchi, A. Saletes: Appl. Phys. Lett. 51, 1075 (1987)CrossRefGoogle Scholar
  179. 7.179
    Y. Horikoshi, A. Fischer, K. Ploog: Appl. Phys. Lett. 45, 919 (1984)CrossRefGoogle Scholar
  180. 7.180
    Y. Horkoshi, K. Ploog: Appl. Phys. Lett. 37, 47 (1985)Google Scholar
  181. 7.181
    F. Capasso: Surf. Sci. 132, 527 (1983)CrossRefGoogle Scholar
  182. 7.182
    F. Capasso: Surf. Sci. 142, 513 (1984)CrossRefGoogle Scholar
  183. 7.183
    E.F. Schubert, A. Fischer, K. Ploog: Electron. Lett. 21, 411 (1985)CrossRefGoogle Scholar
  184. 7.184
    E.F. Schubert, A. Fischer, K. Ploog: IEEE Trans. ED-33, 625 (1986)Google Scholar
  185. 7.185
    F. Capasso, S. Sen, A.Y. Cho: Appl. Phys. Lett. 51, 526 (1987)CrossRefGoogle Scholar
  186. 7.186
    S. Sen, F. Capasso, A.C. Gossard, R.A. Spah, A.L. Hutchinson, S.N.G. Chu: Appl. Phys. Lett. 51, 1428 (1987)CrossRefGoogle Scholar
  187. 7.187
    V.J. Goldman, D.C. Tsui, J.E. Cunningham, W.T. Tsang: J. Appl. Phys. 61, 2693 (1987)CrossRefGoogle Scholar
  188. 7.188
    M. Heiblum, D.C. Thomas, CM. Knoedler, M.I. Nathan: Surf. Sci. 174, 478 (1986)CrossRefGoogle Scholar
  189. 7.189
    K. Imamura, S. Muto, N. Yokoyama, M. Sasa, H. Ohnishi, S. Hiyamizu, H. Nishi: Surf. Sci. 174, 481 (1986)CrossRefGoogle Scholar
  190. 7.190
    J.P. Faurie: J. Cryst. Growth 81, 483 (1987) and Prog. Cryst. Growth and Charact. 29, 86 (1994)CrossRefGoogle Scholar
  191. 7.191
    J.P. Faurie, J. Reno, S. Sivananthan, I.K. Sou, X. Chu, M. Boukerche, P.S. Wijewarnasuriay: J. Vac. Sci. Technol. B 4, 585 (1986)CrossRefGoogle Scholar
  192. 7.192
    J.P. Faurie: IEEE J. QE-22, 1656 (1986)CrossRefGoogle Scholar
  193. 7.193
    J. Reno, I.K. Sou, J.P. Faurie, J.M. Berroir, Y. Guldner: J. Vac. Sci. Technol. A 5, 3107 (1987) T. Skauli, H. Steen, T. Colin, P. Helgesen, S. Lövold, C.T. Elliott, N.T. Gordon, T.J. Phillips, A.M. White: Appl. Phys. Lett. 68, 1235 (1996) J. Bonnet-Gamard, J. Bleuse, N. Magnea, J.L. Pautrat: J. Appl. Phys. 78, 6908 (1995)CrossRefGoogle Scholar
  194. 7.194
    M.A. Herman, M. Pessa: J. Appl. Phys. 57, 2671 (1985)CrossRefGoogle Scholar
  195. 7.195
    K.a. Harris, S. Hwang, D.K. Blanks, J.W. Cook, Jr., J.F. Schetzina, N. Otsuka: J. Vac. Sci. Technol. A 4, 2061 (1986)CrossRefGoogle Scholar
  196. 7.196
    J. Reno, I.K. Sou, P.S. Wijewarnasuriya, J.P. Faurie: Appl. Phys. Lett. 48, 1069 (1986)CrossRefGoogle Scholar
  197. 7.197
    J.P. Faurie, I.K. Sou, P.S. Wijewarnasuriya, S. Rafol, K.C. Woo: Phys. Rev. B 34, 6000 (1986)CrossRefGoogle Scholar
  198. 7.198
    M. Boukerche, I.K. Sou, M. DeSouza, S.S. Yoo, J.P. Faurie: J. Vac. Sci. Technol. A 5, 3119 (1987)CrossRefGoogle Scholar
  199. 7.199
    K.C. Woo, S. Rafol, J.P. Faurie: J. Vac. Sci. Technol. A 5, 3093 (1987)CrossRefGoogle Scholar
  200. 7.200
    X. Chu, S. Sivananthan, J.P. Faurie: Appl. Phys. Lett. 50, 597 (1987)CrossRefGoogle Scholar
  201. 7.201
    R.P. Ruth, Y. Marfaing, J.B. Mullin, J. Wods (eds.): Proc. 3rd Int’l. Conf. II-VI Compounds, Monterey (1987) J. Cryst. Growth 86, nos. 1–4 (1988) and R.N. Bhargava, R.P. Ruth, T. Yao, A.V. Nurmiko (eds.): Proc. 6th Int’l. Conf. II-IV Compounds and Related Optoelectronic Materials, Newport (1993) J. Cryst. Growth 138, nos. 1–4 (1994)Google Scholar
  202. 7.202
    T.N. Casselman (ed.): Proc. 1985 U.S. Workshop on Phys. Chem. Mercury Cadmium Telluride J. Vac. Sci. Technol. A 4, no. 4 (1986)Google Scholar
  203. 7.203
    H.F. Schaake (ed.): Proc. 1986 U.S. Workshop on Phys. Chem. Mercury Cadmium Telluride; J. Vac. Sci. Technol. A 5, no. 5 (1987)Google Scholar
  204. 7.204
    Proc. 1987 U.S. Workshop on Phys. Chem. Mercury Cadmium Telluride. J. Vac. Sci. Technol. A 6 2813 (1988) D.G. Seiler (ed.): U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Novel Infrared Detector Materials 1990, J. Vac. Sci. Technol. B 9, no. 3 (1991) D.G. Seiler(ed.): U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Other II-IV Compounds 1991, J. Vac. Sci. Technol. B 10, no. 4 (1992)Google Scholar
  205. 7.205
    J.P. Faurie, A. Million: J. Cryst. Growth 54, 582 (1981)CrossRefGoogle Scholar
  206. 7.206
    J.P. Faurie, A. Million: Appl. Phys. Lett. 41, 264 (1982)CrossRefGoogle Scholar
  207. 7.207
    J.P. Faurie, A. Million, J. Piaguet: Appl. Phys. Lett. 41, 713 (1982)CrossRefGoogle Scholar
  208. 7.208
    Y. Guldner, G. Bastard, J.P. Vieren, M. Voos, J.P. Faurie, A. Million: Phys. Rev. Lett. 51, 907 (1983)CrossRefGoogle Scholar
  209. 7.209
    C. Fontaine, Y. Demay, J.P. Gailliard, A. Million, J. Piaguet: Thin Solid Films 130, 327 (1985)CrossRefGoogle Scholar
  210. 7.210
    A. Million, L. DiCioccio, J.P. Gailliard, J. Piaguet: In [7.204]Google Scholar
  211. 7.211
    S. Wood, J. Greggi, Jr., R.F.C. Farrow, W.J. Takei, F.A. Shirland, A.J. Noreika: J. Appl. Phys. 55, 4225 (1984)CrossRefGoogle Scholar
  212. 7.212
    J.P. Faurie, S. Sivananthan, M. Boukerche, J. Reno: Appl. Phys. Lett. 45, 1307 (1984)CrossRefGoogle Scholar
  213. 7.213
    L.A. Kolodziejski, R.L. Gunshor, N. Otsuka, X.C. Chang, S.K. Chang, A.V. Nurmikko: Appl. Phys. Lett. 47, 882 (1985)CrossRefGoogle Scholar
  214. 7.214
    H.A. Mar, K.T. Chee, N. Salansky: Appl. Phys. Lett. 44, 237 (1984)CrossRefGoogle Scholar
  215. 7.215
    J.M. Balingall, M.L. Wroge, D.J. Leopold: Appl. Phys. Lett. 48, 1273 (1985)CrossRefGoogle Scholar
  216. 7.216
    J. Humenberger, H. Sitter: Proc. 7th Int’l Conf. Thin Films, New Delhi 1987, in Thin Solid Films 163, 241 (1989)CrossRefGoogle Scholar
  217. 7.217
    J. Humenberger, H. Sitter, K. Lischka, A. Pesek, H. Pascher: Characterization of large area CdTe and CdZnTe layers on GaAs grown with a novel epitaxy system, in The Physics of Semiconductors, ed. by E.H. Anastasakis, J.D. Ioannopoulos (World Scientific, Singapore 1990) p. 312Google Scholar
  218. 7.218
    S. Sivananthan, X. Chu, J. Reno, J.P. Faurie: J. Appl. Phys. 60, 1359 (1986)CrossRefGoogle Scholar
  219. 7.219
    S. Sivananthan, X. Chu, J.P. Faurie: J. Vac. Sci. Technol. B 5, 694 (1987)CrossRefGoogle Scholar
  220. 7.220
    J.M. Arias, S.H. Shin, E.R. Gertner: J. Cryst. Growth 86, 362 (1988)CrossRefGoogle Scholar
  221. 7.221
    A. Kahn: Surf. Sci. 168, 1 (1986)CrossRefGoogle Scholar
  222. 7.222
    K. Nishitani, R. Ohkata, T. Murotoni: J. Electron. Mater. 12, 619 (1983)CrossRefGoogle Scholar
  223. 7.223
    R.N. Bicknell, R.Y. Yanka, N.C. Giles, J.F. Schetzina, T.J. Magee, C. Leung, H. Kawayashi: Appl. Phys. Lett. 44, 313 (1984)CrossRefGoogle Scholar
  224. 7.224
    J.T. Cheung, T.J. Magee: J. Vac. Sci. Technol. A 1, 1604 (1983)CrossRefGoogle Scholar
  225. 7.225
    P.P. Chow, D.K. Greenlaw, D. Johnson: J. Vac. Sci. Technol. A 1, 562 (1983)CrossRefGoogle Scholar
  226. 7.226
    N. Otsuka, L.A. Kolodziejski, R.L. Gunshor, S. Datta, R.W. Bicknell, J.F. Schetzina: Appl. Phys. Lett. 46, 860 (1985)CrossRefGoogle Scholar
  227. 7.227
    J.P. Faurie, C. Hsu, S. Sivananthan, X. Chu: Surf. Sci. 168, 473 (1986)CrossRefGoogle Scholar
  228. 7.228
    R. Srinivasa, M.B. Panish, H. Temkin: Appl. Phys. Lett. 50, 1441 (1987)CrossRefGoogle Scholar
  229. 7.229
    C. Hsu, S. Sivananthan, X. Chu, J.P. Faurie: Appl. Phys. Lett. 48, 908 (1986)CrossRefGoogle Scholar
  230. 7.230
    J.P. Faurie, M. Boukerche, J. Reno, S. Sivananthan, C. Hsu: J. Vac. Sci. Technol. A 3, 55 (1985)CrossRefGoogle Scholar
  231. 7.231
    J. Reno, I.K. Sou, P.S. Wijewarnasuriya, P.J. Faurie: Appl. Phys. Lett. 47, 1168 (1985)CrossRefGoogle Scholar
  232. 7.232
    S. Sivananthan, X. Chu, M. Boukerche, J.P. Faurie: Appl. Phys. Lett. 47, 1291 (1985)CrossRefGoogle Scholar
  233. 7.233
    W.E. Spicer, J.a. Silberman, I. Lindau, A.B. Chen, A. Sher, J.A. Wilson: J. Vac. Sci. Technol. A 13, 1735 (1983)CrossRefGoogle Scholar
  234. 7.234
    A. Sher, D. Eger, A. Zemel: Appl. Phys. Lett. 46, 59 (1985)CrossRefGoogle Scholar
  235. 7.235
    J.P. Faurie, J. Reno, M. Boukerche: J. Cryst. Growth 72, 111 (1985)CrossRefGoogle Scholar
  236. 7.236
    J.P. Faurie, M. Boukerche, S. Sivananthan, J. Reno, C. Hsu: Superlattices and Microstructures 1, 237 (1985)CrossRefGoogle Scholar
  237. 7.237
    C.E. Jones, T.N. Casselman, J.P. Faurie, S. Perkowitz, J.N. Schulman: Appl. Phys. Lett. 47, 140 (1985)CrossRefGoogle Scholar
  238. 7.238
    L. DiCioccio, A. Million, J.P. Gailliard, M. Dupny: Rev. Phys. Appl. 22, 465 (1987)CrossRefGoogle Scholar
  239. 7.239
    D.J. Olego, J.P. Faurie: Phys. Rev. B 33, 7357 (1986)CrossRefGoogle Scholar
  240. 7.240
    J.M. Berroir, Y. Guldner, J.P. Vieren, M. Voos, J.P. Faurie: Phys. Rev. B 34, 891 (1986)CrossRefGoogle Scholar
  241. 7.241
    J. Reno, J.P. Faurie: Appl. Phys. Lett. 49, 409 (1986)CrossRefGoogle Scholar
  242. 7.242
    T.H. Myers, J.R. Meyer, C.A. Hoffman, L. Ram-Mohan: Appl. Phys. Lett. 61, 1814 (1992)CrossRefGoogle Scholar
  243. 7.243
    K.A. Harris, T.H. Myers, R.W. Yanka, L.M. Mohnkern, N. Otsuka: J. Vac. Sci. Techhol. B 9, 1752 (1991)CrossRefGoogle Scholar
  244. 7.244
    D.L. Smith, T.C. McGill, J.N. Schulman: Appl. Phys. Lett. 43, 180 (1983)CrossRefGoogle Scholar
  245. 7.245
    J.P. Faurie, S. Sivananthan, X. Chu, P.A. Wijewarnasuiya: Appl. Phys. Lett. 48, 785 (1986)CrossRefGoogle Scholar
  246. 7.246
    P.S. Wijewarnasuriya, I.K. Sou, Y.J. Kim, K.K. Mahavadi, S. Sivananthan, M. Boukerche, J.P. Faurie: Appl. Phys. Lett. 51, 2025 (1987)CrossRefGoogle Scholar
  247. 7.247
    P.M. Raccah, J.W. Garland, Z. Zhang, A.H.M. Chu, J. Reno, J.K. Sou, M. Boukerche, J.P. Faurie: J. Vac. Sci. Technol. A 4, 2077 (1986)CrossRefGoogle Scholar
  248. 7.248
    M. Bourkerche, P.S. Wijewarnasuriya, J. Reno, I.K. Sou, J.P. Faurie: J. Vac. Sci. Technol. A 4, 2072 (1986)CrossRefGoogle Scholar
  249. 7.249
    M. Boukerche, J. Reno, I.K. Sou, C. Hsu, J.P. Faurie: Appl. Phys. Lett. 48, 1733 (1986)CrossRefGoogle Scholar
  250. 7.250
    J.M. Arias, S.H. Shin, J.G. Pasko, E.R. Gertner: Appl. Phys. Lett. 52, 39 (1988) S.D. Chen, L. Lin, X.Z. He, M.J. Ying, R.Q. Wu: J. Cryst. Growth 152, 261 (1995)CrossRefGoogle Scholar
  251. 7.251
    J.P. Faurie, A. Million, R. Boch, J.L. Tissot: J. Vac. Sci. Technol. A 1, 1953 (1983)CrossRefGoogle Scholar
  252. 7.252
    C.J. Summers, B.K. Wagner, R.G. Benz: Prog. Cryst. Growth Charact. 29, 161 [1994] K. Hara, H. Machimura, M. Usui, H. Munekata, H. Kukimoto, J. Yoshino: Appl. Phys. Lett. 66, 3337 (1995)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1996

Authors and Affiliations

  • Marian A. Herman
    • 1
    • 2
  • Helmut Sitter
    • 3
  1. 1.Institute of PhysicsPolish Academy of SciencesWarszawaPoland
  2. 2.Institute of Vacuum TechnologyWarszawaPoland
  3. 3.Institut für ExperimentalphysikJohannes Kepler UniversitätLinz/AuhofAustria

Personalised recommendations