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Material-Related Growth Characteristics in MBE

  • Chapter
Molecular Beam Epitaxy

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 7))

Abstract

Different materials exhibit usually different properties from the point of view of growth peculiarities [7.1]. The characteristic features which distinguish the materials are usually connected with a specific chemical element, e.g., Si, As, P, or Hg. The presence of this element in the material to be grown demands special technological precautions because of, for example, high evaporation temperature, high volatility, or extraordinary chemical reactivity. The special properties of the constituent elements also frequently bring about quite different growth mechanisms of the compounds crystallized with MBE.

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  1. Institute of Physics, Polish Academy of Sciences, al. Lotnikow 46, PL-02-668, Warszawa, Poland

    Prof. Dr. Marian A. Herman

  2. Institute of Vacuum Technology, ul. Dluga 44/50, PL-00-241, Warszawa, Poland

    Prof. Dr. Marian A. Herman

  3. Institut für Experimentalphysik, Johannes Kepler Universität, A-4040, Linz/Auhof, Austria

    Dr. Helmut Sitter

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Herman, M.A., Sitter, H. (1996). Material-Related Growth Characteristics in MBE. In: Molecular Beam Epitaxy. Springer Series in Materials Science, vol 7. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80060-3_7

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