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High-Vacuum Growth and Processing Systems

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Molecular Beam Epitaxy

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 7))

Abstract

The maturity which the MBE technique has now achieved is reflected in the demand for high throughput, high yield MBE machines. A whole set of companies currently manufacture MBE-growth and MBE-related equipment that is sophisticated in design and reliable in application. Among the largest manufacturers which share the major part of the world market [3.1], the following may be listed: ISA Riber [3.2–4] and VG Semicon [3.5, 6] in Europe, Intevac MBE (formerly Varian) [3.7–9] and EPI (Epitaxial Products International) [3.10] in the USA (recently these US MBE suppliers merged [3.11] into EPI MBE Products Group [3.12], and ANELVA and ULVAC in Japan.

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References

  1. 1994 Yearbook of III-V Suppliers, in: III-Vs Rev. 6, no. 6, p. 60 (1993)

    Google Scholar 

  2. EPINEAT: Field-proven for III-V Production, in: III-Vs Rev. 7, no 4, p. 14 (1994)

    Google Scholar 

  3. A New Way to Control MBE Growth: Ruber’s Accessible Softwares, in: III-Vs Rev. 6, no. 5, p. 20 (1993)

    Google Scholar 

  4. Riber Phosphorus Cracker, in: III-Vs Rev. 7, no. 2, p. 54 (1994)

    Google Scholar 

  5. VG Semicon: MBE Technology Proven in R & D and Production, in: III-Vs Rev. 5, no. 1, p. 46 (1992)

    Google Scholar 

  6. VG Semicon: The Vital Component for MBE, in: III-Vs Rev. 6, no. 3, p. 44 (1993)

    Google Scholar 

  7. Intevac Redefines Goals, in: III-Vs Rev. 5, no. 5, p. 40 (1992)

    Google Scholar 

  8. Intevac Successes in Japan and USA, in: III-Vs Rev. 6, no. 1, p. 45 (1993)

    Google Scholar 

  9. Intevac Makes the Point, in: III-Vs Rev. 6, no. 2, p. 40 (1993)

    Google Scholar 

  10. Epitaxial Products International Ltd., the III-V Epitaxy Experts, in: III-Vs Rev. 5, no. 5, p. 14 (1992)

    Google Scholar 

  11. US MBE Suppliers Merge: Intevac MBE Operation Goes to EPI, in: III-Vs Rev. 6, no. 6, p. 4 (1993)

    Google Scholar 

  12. Model 1040 P: P-MBE without Toxic Gases, in: III-Vs Rev. 7, no. 3, p. 30 (1994)

    Google Scholar 

  13. B.A. Joyce: Contemporary Phys. 31, 195 (1990)

    Article  Google Scholar 

  14. G.J. Davies, D. Williams: III-V MBE growth systems, in The Technology and Physics of Molecular Beam Epitaxy, ed. by E.H.C. Parker (Plenum, New York 1985) R. Wiesendanger (ed.): Scanning Probe Methods in Materials Science, Appl. Phys. A 59, nos. 1,2 (1994)

    Google Scholar 

  15. Products for the Semiconductor Industry, a VG Instruments advertisement pamphlet (1985)

    Google Scholar 

  16. MBE, an ISA Riber advertisement pamphlet (1987)

    Google Scholar 

  17. D.E. Mars, J.N. Miller: J. Vac. Sci. Technol. B 4, 571 (1986)

    Article  CAS  Google Scholar 

  18. J. Massies, J.P. Contour: Jpn. J. Appl. Phys. 26, L38 (1987)

    Article  CAS  Google Scholar 

  19. W.M. Lau, R.N.S. Sodhi, S. Ingrey: Appl. Phys. Lett. 52, 386 (1988)

    Article  CAS  Google Scholar 

  20. High Yield GaAs/AlGaAs MBE with the V80H, a VG Semicon advertisement pamphlet (1986)

    Google Scholar 

  21. Gas Source MBE in the V80H, a VG Semicon advertisement pamphlet (1987)

    Google Scholar 

  22. B. Böiger, P.K. Larsen: Rev. Sci. Instrum. 57, 1363 (1986)

    Article  Google Scholar 

  23. H. Marten, G. Meyer-Ehmsen: Surf. Sci. 151, 570 (1985)

    Article  CAS  Google Scholar 

  24. B.A. Joyce, J.H. Neave, P.J. Dobson, P.K. Larsen: Phys. Rev. B 29, 814 (1984)

    Article  CAS  Google Scholar 

  25. K. Heinz, K. Müller: Structural Studies of Surfaces, in Springer Tracts Mod. Phys. 91, p. 91 (Springer, Berlin, Heidelberg 1982)

    Book  Google Scholar 

  26. M. Ichikawa, K. Hayakawa: Jpn. J. Appl. Phys. 21, 145 and 154 (1982)

    Article  CAS  Google Scholar 

  27. M. Ichikawa, T. Doi, K. Hayakawa: Surface Sci. 159, 133 (1985)

    Article  CAS  Google Scholar 

  28. M. Ichikawa, T. Doi: Appl. Phys. Lett. 50, 1141 (1987)

    Article  CAS  Google Scholar 

  29. M. Ichikawa: Mater. Sci. Rept. 4, 147 (1989)

    Article  CAS  Google Scholar 

  30. T. Isu, M. Hata, A. Watanabe, Y. Katayama: J. Vac. Sci. Technol. B 7, 714 (1989)

    Article  CAS  Google Scholar 

  31. T. Isu, Y. Morishita, S. Goto, Y. Nomura, Y. Katayama: J. Cryst. Growth 127, 942 (1993)

    Article  CAS  Google Scholar 

  32. Y. Morishita, Y. Nomura, S. Goto, T. Isu, Y. Katayama: J. Cryst. Growth 127, 999 (1993)

    Article  CAS  Google Scholar 

  33. R. Wiesendanger: J. Vac. Sci. Technol. B 12, 515 (1994)

    Article  CAS  Google Scholar 

  34. H.-J. Güntherodt, R. Wiesendanger (eds.): Scanning Tunneling Microscopy I, 2nd edn., Springer Ser. Surf. Sci., Vol. 20 (Springer, Berlin, Heidelberg 1994) M. Henini: III-Vs Rev. 6, no. 2, p. 58 (1993) C.W. Ebert, L.J. Peticolas, C.L. Reynolds, Jr., H.H. Vuong: J. Vac. Sci. Technol. B 12, 616 (1994) J.W. Cook, Jr., J.F. Schetzina: J. Vac. Sci. Technol. B 12, 1229 (1994) S.R. Johnson, G. Lavoie, E. Nodwell, M.K. Nissen, T. Tiedje, J.A. Mackenzie: J. Vac. Sci. Technol. B 12, 1225 (1994)

    Google Scholar 

  35. C.-L. Bai, R. Colton, Y. Kuk (eds.), Proc. 1993 Int. Conf. STM, Beijing, China. J. Vac. Sci. Technol. B 12, no. 3 (1994) C.-L. Bai: Scanning Tunneling Microscopy and Related Techniques, Springer Surf. Sci, Vol. 32, (Springer, Berlin, Heidelberg 1995)

    Google Scholar 

  36. S. Ohkouchi, I. Tanaka, N. Ikoma: J. Cryst. Growth 127, 962 (1993)

    Article  CAS  Google Scholar 

  37. T. Saitoh, A. Hashimoto, S. Ohkouchi, M. Tamura: J. Cryst. Growth 127, 1018 (1993)

    Article  CAS  Google Scholar 

  38. N. Shimizu, H. Kitada, O. Ueda: J. Cryst. Growth 150, 1159 (1995)

    Article  CAS  Google Scholar 

  39. N. Prank, G. Springholz, G. Bauer: J. Cryst. Growth 150, 1190 (1995)

    Article  Google Scholar 

  40. G. Springholz, N. Prank, G. Bauer: Appl. Phys. Lett. 64, 2970 (1994)

    Article  Google Scholar 

  41. F. Jona, J.A. Strozier, W.S. Yang: Rep. Prog. Phys. 45, 527 (1982)

    Article  Google Scholar 

  42. HWBE 2500, an advertisement leaflet of TOPLAB a division of Hainzl Industriesysteme (1987)

    Google Scholar 

  43. A. Lopez-Otero: Thin Solid Films 49, 3 (1978)

    Article  CAS  Google Scholar 

  44. J. Humenberger, H. Sitter, K. Lischka, A. Pesek, H. Pascher: in The Physics of Semiconductors, ed. by E.H. Anastasakis, J.D. Joannopoulos, p. 312 (World Scientific, Singapore 1990)

    Google Scholar 

  45. J. Melngailis: J. Vac. Sci. Technol. B 5, 469 (1987)

    Article  CAS  Google Scholar 

  46. E. Miyauchi, H. Hashimoto: J. Vac. Sci. Technol. A 4, 933 (1986) M. Hong: J. Cryst. Growth 150, 277 (1995)

    Article  CAS  Google Scholar 

  47. E. Miyauchi, H. Arimoto, H. Hashimoto, T. Utsumi: J. Vac. Sci. Technol. B 1, 1113 (1983)

    Article  CAS  Google Scholar 

  48. R.L. Seliger: J. Appl. Phys. 43, 2352 (1972)

    Article  Google Scholar 

  49. W.T. Tsang, A.Y. Cho. Appl. Phys. Lett. 30, 293 (1977)

    Article  CAS  Google Scholar 

  50. Y.C. Lin, A.R. Neureuther, W.G. Oldham: J. Electrochem. Doc. 130, 939 (1983)

    Article  CAS  Google Scholar 

  51. M.A. Hasan, J. Knall, S.A. Barnett, A. Rockett, J.E. Sundgren, J.E. Greene: J. Vac. Sci. Technol. B 5, 1332 (1987)

    Article  CAS  Google Scholar 

  52. C. Lejeune, G. Gautherin: Vacuum 34, 251 (1984)

    Article  CAS  Google Scholar 

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Author information

Authors and Affiliations

  1. Institute of Physics, Polish Academy of Sciences, al. Lotnikow 46, PL-02-668, Warszawa, Poland

    Prof. Dr. Marian A. Herman

  2. Institute of Vacuum Technology, ul. Dluga 44/50, PL-00-241, Warszawa, Poland

    Prof. Dr. Marian A. Herman

  3. Institut für Experimentalphysik, Johannes Kepler Universität, A-4040, Linz/Auhof, Austria

    Dr. Helmut Sitter

Authors
  1. Prof. Dr. Marian A. Herman
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  2. Dr. Helmut Sitter
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© 1996 Springer-Verlag Berlin Heidelberg

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Herman, M.A., Sitter, H. (1996). High-Vacuum Growth and Processing Systems. In: Molecular Beam Epitaxy. Springer Series in Materials Science, vol 7. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80060-3_3

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  • DOI: https://doi.org/10.1007/978-3-642-80060-3_3

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-80062-7

  • Online ISBN: 978-3-642-80060-3

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