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Growth and Etching of GaAs(001)

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Book cover Computer Simulation Studies in Condensed-Matter Physics VIII

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 80))

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Abstract

Recent progress in the atomic-scale modeling of epitaxial growth and chemical-beam etching of GaAs(001) using kinetic Monte Carlo simulations of a simple solid-on-solid model is reviewed. The additional activation barrier to interlayer transport emerges as a key factor for the evolution of the surface morphology during both growth and etching.

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References

  1. Molecular beam epitaxy, edited by A. Cho ( American Institute of Physics, New York, 1994 ).

    Google Scholar 

  2. W.T. Tsang, R. Kapre, and P.F. Sciortino, Appl. Phys. Lett. 62, 2084 (1993); W.T. Tsang, T.H. Chiu, and R.M. Kapre, Appl. Phys. Lett. 63, 3500 (1993).

    Google Scholar 

  3. G.H. Gilmer and P. Bennema, J. Appl. Phys. 43, 1347 (1972); J.D. Weeks and G.H. Gilmer, Adv. Chem. Phys. 40, 157 (1979).

    Google Scholar 

  4. S. Clarke and D.D. Vvedensky, Phys. Rev. Lett. 58, 2235 (1987).

    Article  ADS  Google Scholar 

  5. See A. Madhukar and S.V. Ghaisas, CRC Critical Reviews in Solid State and Materials Science 14,1 (1988) for a review.

    Google Scholar 

  6. J.H. Neave, P.J. Dobson, B.A. Joyce, and J. Zhang, Appl. Phys. Lett. 47, 100 (1985).

    Article  ADS  Google Scholar 

  7. H.C. Kang and W.H. Weinberg, J. Chem. Phys. 90, 2824 (1989).

    Article  ADS  Google Scholar 

  8. A. Zangwill, Physics at Surfaces (Cambridge University Press, Cambridge, Eng-land 1988 ).

    Google Scholar 

  9. Z. Zhang, Y.-T. Lu, and H. Metiu, Surf. Sci. 255, L543 (1991); C.-L. Liu and J.B. Adams, Surf. Sci. 265, 262 (1992).

    Google Scholar 

  10. J. Zhang, J.H. Neave, P.J. Dobson, and B.A. Joyce, Appl. Phys. A 42, 317 (1987).

    Article  ADS  Google Scholar 

  11. T. Shitara, D.D. Vvedensky, M.R. Wilby, J. Zhang, J.H. Neave, and B.A. Joyce, Phys. Rev. B 46, 6815 (1992); ibid. 46, 6825 (1992).

    ADS  Google Scholar 

  12. A.K. Myers-Beaghton and D.D. Vvedensky, Phys. Rev. B 42, 5544 (1990); S. Stoyanov, Appl. Phys. A 50, 349 (1990).

    Google Scholar 

  13. J.H. Neave, B.A. Joyce, P.J. Dobson, and N. Norton, Appl. Phys. A 31,1 (1983); F. J. Grunthaner, A. Madhukar, T.C. Lee, and R. Fernandez, J. Vac. Sci. Technol. B 3,1317 (1985); A. Yoshinaga, M. Fahy, S. Dosanjh, J. Zhang, J.H. Neave, and B.A. Joyce, Surf. Sci. 264, L157 (1992).

    Google Scholar 

  14. D.D. Vvedensky and S. Clarke, Surf. Sci. 225, 373 (1990).

    Article  ADS  Google Scholar 

  15. P. Smilauer and D.D. Vvedensky, Phys. Rev. B 48, 17603 (1993).

    Article  ADS  Google Scholar 

  16. G. Ehrlich and F.G. Hudda, J. Chem. Phys. 44, 1039 (1966).

    Article  ADS  Google Scholar 

  17. R.L. Schwoebel andE. J. Shipsey, J. Appl. Phys. 37,3682 (1966); R.L. Schwoebel, J. Appl. Phys. 40, 614 (1969).

    Google Scholar 

  18. S.G. Bales and A. Zangwill, Phys. Rev. B 41, 5500 (1990).

    Article  ADS  Google Scholar 

  19. L.-M. Peng and M.J. Whelan, Proc. R. Soc. London 435, 257 (1991).

    Article  ADS  Google Scholar 

  20. H.T.W. Zandvliet, H.B. Elswijk, D. Dijkkamp, E.J. van Loenen, and J. Dieleman, J. Appl. Phys. 70,2614 (1991); T. Shitara, J. Zhang, J.H. Neave, and B.A. Joyce, J. Appl. Phys. 71, 4299 (1992).

    Google Scholar 

  21. J. Villain, J. Phys. I (France) 1, 19 (1991).

    Article  Google Scholar 

  22. M.D. Johnson, C. Orme, A.W. Hunt, D. Graff, J.L. Sudijono, L.M. Sander, and B.G. Orr, Phys. Rev. Lett. 72, 116 (1994).

    Article  ADS  Google Scholar 

  23. C. Orme, M.D. Johnson, J.L. Sudijono, K.T. Leung, and B.G. Orr, Appl. Phys. Lett. 64, 860 (1994).

    Google Scholar 

  24. P. Smilauer and D.D. Vvedensky (unpublished).

    Google Scholar 

  25. T. Kaneko, P. Smilauer, B.A. Joyce, T. Kawamura, and D.D. Vvedensky (unpublished).

    Google Scholar 

  26. R. Kunkel, B. Poelsema, L.K. Verheij, and G. Comsa, Phys. Rev. Lett. 65, 733 (1990).

    Article  ADS  Google Scholar 

  27. B. Poelsema, L.K. Verheij, and G. Comsa, Phys. Rev. Lett. 53, 2500 (1984).

    Article  ADS  Google Scholar 

  28. T. Michely, T. Land, U. Littmark, and G. Comsa, Surf. Sei. 272, 204 (1992).

    Article  ADS  Google Scholar 

  29. P. Bedrossian, J.E. Houston, J.Y. Tsao, E. Chason, and S.T. Picraux, Phys. Rev. Lett. 67, 124 (1991); P. Bedrossian and T. Klitsner, Phys. Rev. Lett. 68, 646 (1992); P. Bedrossian, Surf. Sei. 301, 223 (1994).

    Google Scholar 

  30. Possible mechanisms for the annihilation of vacancies formed in lower layers and the role of adatom and vacancy migration are discussed in Refs. [28] and [35].

    Google Scholar 

  31. M. Bott, T. Michely, and G. Comsa, Surf. Sei. 272, 161 (1992).

    Article  ADS  Google Scholar 

  32. J.A. Stroscio, D.T. Pierce, M. Stiles, A. Zangwill, and L.M. Sander (unpublished).

    Google Scholar 

  33. N. Haider, M.R. Wilby, and D.D. Vvedensky, Appl. Phys. Lett. 62, 3108 (1993).

    Article  ADS  Google Scholar 

  34. A.F. Voter, Phys. Rev. B 34, 6819 (1986).

    Google Scholar 

  35. P. Smilauer, M.R. Wilby, and D.D. Vvedensky, Surf. Sei. Lett. 291, L733 (1993).

    Google Scholar 

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Author information

Author notes

  1. P. Šmilauer

    Present address: HLRZ, Forschungszentrum Jülich, 52425, Jülich, Germany

Authors and Affiliations

  1. Interdisciplinary Research Center for Semiconductor Materials, Imperial College, London, SW7 2BZ, UK

    P. Šmilauer

  2. The Blackett Laboratory, Imperial College, London, SW7 2BZ, UK

    P. Šmilauer & D. D. Vvedensky

  3. Institute of Physics, Cukrovarnická 10, 162 00, Praha 6, Czech Republic

    P. Šmilauer

  4. Department of Physics, Imperial College, London, SW7 2BZ, UK

    D. D. Vvedensky

Authors
  1. P. Šmilauer
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  2. D. D. Vvedensky
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Editor information

Editors and Affiliations

  1. Center for Simulational Physics, The University of Georgia, 30602, Athens, GA, USA

    David P. Landau Ph. D. , K. K. Mon Ph. D.  & Heinz-Bernd Schüttler Ph. D. ,  & 

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© 1995 Springer-Verlag Berlin Heidelberg

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Šmilauer, P., Vvedensky, D.D. (1995). Growth and Etching of GaAs(001). In: Landau, D.P., Mon, K.K., Schüttler, HB. (eds) Computer Simulation Studies in Condensed-Matter Physics VIII. Springer Proceedings in Physics, vol 80. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-79991-4_4

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  • DOI: https://doi.org/10.1007/978-3-642-79991-4_4

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-79993-8

  • Online ISBN: 978-3-642-79991-4

  • eBook Packages: Springer Book Archive

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